Effect of Substrate Miscut on the Direct Growth of Semipolar ($10\bar{1}\bar{1}$) GaN on (100) MgAl2O4 by Metalorganic Chemical Vapor Deposition

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概要

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• We report on the the direct growth of semipolar ($10\bar{1}\bar{1}$) GaN templates on (100) MgAl2O4 substrates miscut in the $\langle 011\rangle$ direction. ($10\bar{1}\bar{1}$) GaN deposited on nominally on-axis substrates did not coalesce. An intentional substrate miscut broke the four-fold symmetry of the substrate surface and resulted in coalesced layers. The minimum full-width at half maximum (FWHM) of the on-axis ($10\bar{1}\bar{1}$) X-ray rocking curve was 0.4° for a 1.5° miscut. The FWHM of the off-axis ($000\bar{2}$) rocking curve remained constant for miscuts ${<}3.0$°. 93% and 99% of the volume of the samples were aligned in a single epitaxial variant for 1.5° and 3.0° substrate miscuts, respectively.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2006-06-25

著者

• IZA Michael

  Materials and Electrical Engineering Departments, University of California

• Kaeding John

  Materials And Electrical Engineering Departments University Of California

• Nakamura Shuji

  Materials Department University Of Cahfornia

• DenBaars Steven

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Sato Hitoshi

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

• Iza Michael

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

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