High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar $(30\bar{3}\bar{1})$ Bulk GaN Substrate
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概要
- 論文の詳細を見る
High power and high efficiency semipolar $(30\bar{3}\bar{1})$ nitride light emitting diodes (LEDs), fabricated on low extended defect bulk GaN substrates, are reported for the first time. The LEDs were grown by metal organic chemical vapor deposition (MOCVD) at atmospheric pressure. The peak wavelength was 452 nm, and a minimal redshift of ${<}1$ nm was observed between 5–100 mA, in comparison to large blueshifts in $c$-plane LEDs. The output power and external quantum efficiency (EQE) of the packaged $200 \times 500$ μm2 was 14.48 mW and 26.5%, respectively, at 20 mA.
- 2010-08-25
著者
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Sonoda Junichi
Materials Department University Of California
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Ohta Hiroaki
Materials Department University Of California
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Pan Chih-chien
Materials Department University Of California
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Koslow Ingrid
Materials Department University Of California
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Brinkley Stuart
Electrical And Computer Engineering Department University Of California
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Nakamura Shuji
Materials Department University Of Cahfornia
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Chung Roy
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Ohta Hiroaki
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Pan Chih-Chien
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Chung Roy
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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