Ohmic Cathode Electrode on the Backside of $m$-Plane and ($20\bar{2}1$) Bulk GaN Substrates for Optical Device Applications
スポンサーリンク
概要
- 論文の詳細を見る
Cathode electrodes on the backside of n-type nonpolar $m$-plane ($1\bar{1}00$) and semipolar ($20\bar{2}1$) GaN substrates after thinning were investigated. For $m$-plane, Al deposition after inductively coupled plasma exposure resulted in ohmic characteristics with a specific contact resistivity of $1.6 \times 10^{-4}$ $\Omega$ cm2 without annealing, where the sub-micron-order pillar-like micromasking were considered to contribute to the ohmic contact. For ($20\bar{2}1$), ohmic characteristics with a specific contact resistivity of $6.9 \times 10^{-5}$ $\Omega$ cm2 was confirmed with Ti/Al electrode after annealing at 500 °C. Such electrodes could improve wall-plug efficiencies of nonpolar and semipolar GaN-based optoelectronic devices.
- 2011-03-25
著者
-
Lin You-da
Electrical And Computer Engineering And Materials Departments University Of California
-
HSIUNG Chia-Lin
Electrical and Computer Engineering Department, University of California
-
Denbaars Steven
Electrical And Computer Engineering And Materials Departments University Of California
-
Nakamura Shuji
Electrical And Computer Engineering Department University Of California
-
Ohta Hiroaki
Materials Department University Of California
-
Hsiung Chia-Lin
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
-
DenBaars Steven
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
関連論文
- Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
- High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
- Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
- m-plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching
- Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
- Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
- Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
- Spiral Growth of InGaN Nanoscale Islands on GaN
- Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
- Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- Ohmic cathode electrode on the backside of m-plane and (2021) bulk GaN substrates for optical device applications
- AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
- GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
- InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates
- m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
- Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates
- Ohmic Cathode Electrode on the Backside of $m$-Plane and ($20\bar{2}1$) Bulk GaN Substrates for Optical Device Applications
- High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
- 30-mW-Class High-Power and High-Efficiency Blue Semipolar (1011) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar $(10\bar{1}\bar{1})$ Bulk GaN Substrates
- Electroluminescence Characterization of ($20\bar{2}1$) InGaN/GaN Light Emitting Diodes with Various Wavelengths
- Light Emitting Diodes with ZnO Current Spreading Layers Deposited from a Low Temperature Aqueous Solution
- Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology
- Propagation of Spontaneous Emission in Birefringent $m$-Axis Oriented Semipolar ($11\bar{2}2$) (Al,In,Ga)N Waveguide Structures
- Optimization of Device Structures for Bright Blue Semipolar ($10\bar{1}\bar{1}$) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition
- 30-mW-Class High-Power and High-Efficiency Blue Semipolar ($10\bar{1}\bar{1}$) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
- Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes
- High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar $(30\bar{3}\bar{1})$ Bulk GaN Substrate
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes
- Optical Characterization of Double Peak Behavior in {10\bar{1}1} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates
- Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
- Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films
- Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown $a$-Plane GaN
- Hexagonal Truncated Pyramidal Light Emitting Diodes through Wafer Bonding of ZnO to GaN, Laser Lift-off, and Photo Chemical Etching
- Selective Area Mass Transport Regrowth of Gallium Nitride
- Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC
- Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates