Light Emitting Diodes with ZnO Current Spreading Layers Deposited from a Low Temperature Aqueous Solution
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概要
- 論文の詳細を見る
We report on the electrical and optical properties of a GaN based light emitting diode (LED) utilizing a ZnO current spreading layer that was deposited by a low temperature aqueous technique. For comparison, a LED employing a conventional thin Ni/Au current spreading layer was also fabricated. In both cases, the same metal organic chemical vapour deposition (MOCVD) grown $c$-plane GaN LED on patterned sapphire wafer was used. Using an integrated sphere measurement, we report a factor of 1.93 power output increase at 20 mA for the ZnO current spreading layer compared to Ni/Au.
- Japan Society of Applied Physicsの論文
- 2009-04-25
著者
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Denbaars Steven
Electrical And Computer Engineering And Materials Departments University Of California
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Thompson Daniel
Electrical And Computer Engineering And Materials Departments University Of California
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Lange Frederick
Electrical And Computer Engineering And Materials Departments University Of California
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Richardson Jacob
Electrical and Computer Engineering, and Materials Departments, University of California, Santa Barb
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Richardson Jacob
Electrical And Computer Engineering And Materials Departments University Of California
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DenBaars Steven
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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