Selective Area Mass Transport Regrowth of Gallium Nitride
スポンサーリンク
概要
- 論文の詳細を見る
Selective area mass transport regrowth of GaN was performed on wafers with etched wells and SiO2 mask. The samples were annealed in NH3 and H2 flow, with no gallium precursor. At 1060°C, only little mass transport occured, but the sidewall morphology changed, depending on crystallographic orientation. At 1160°C, the sidewalls grew out about 1 $\mu$m in 1 min, independent of orientation. The technique can potentially be performed in an annealing chamber, providing a low cost regrowth process. A promising application is ohmic contact regrowth to high composition AlGaN/GaN high electron mobility transistors.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-02-15
著者
-
HEIKMAN Sten
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara
-
Mishra Umesh
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
-
Mishra Umesh
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA
-
DenBaars Steven
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
-
DenBaars Steven
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA
-
Heikman Sten
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA
関連論文
- Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
- High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
- Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
- Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
- Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
- Spiral Growth of InGaN Nanoscale Islands on GaN
- Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
- Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime
- Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
- Selective Area Mass Transport Regrowth of Gallium Nitride
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
- Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy
- Ohmic Cathode Electrode on the Backside of $m$-Plane and ($20\bar{2}1$) Bulk GaN Substrates for Optical Device Applications
- Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
- High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
- 30-mW-Class High-Power and High-Efficiency Blue Semipolar (1011) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar $(10\bar{1}\bar{1})$ Bulk GaN Substrates
- Light Emitting Diodes with ZnO Current Spreading Layers Deposited from a Low Temperature Aqueous Solution
- Optimization of Device Structures for Bright Blue Semipolar ($10\bar{1}\bar{1}$) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition
- 30-mW-Class High-Power and High-Efficiency Blue Semipolar ($10\bar{1}\bar{1}$) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- Optical Characterization of Double Peak Behavior in {10\bar{1}1} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates
- Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
- Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films
- Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown $a$-Plane GaN
- Hexagonal Truncated Pyramidal Light Emitting Diodes through Wafer Bonding of ZnO to GaN, Laser Lift-off, and Photo Chemical Etching
- Selective Area Mass Transport Regrowth of Gallium Nitride
- Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC
- Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates