Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy

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概要

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• N-polar InxAl1-xN ($0.02 < x < 0.65$) films were grown and characterized by plasma-assisted molecular beam epitaxy (PAMBE). Indium incorporation in the films was characterized both as a function of the impinging In and Al flux and the growth temperature. In incorporation in the film was found to decrease with increasing growth temperature ($T_{\text{gr}}$) for $T_{\text{gr}} > 560$ °C. A smooth surface morphology was obtained for In0.18Al0.82N lattice-matched to GaN. Subsequently, N-polar In0.18Al0.82N was used as a charge-inducing barrier in a N-polar GaN HEMT structure and electrical characterizations including current--voltage ($I$--$V$) measurements were performed.

• 2011-04-25

著者

• Mishra Umesh

  Electrical And Computer Engineering Department University Of California

• Wu Feng

  Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Dasgupta Sansaptak

  Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Choi Soojeong

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Mishra Umesh

  Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.

• Wu Feng

  Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

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