AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
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概要
- 論文の詳細を見る
- 2011-09-25
著者
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Hardy Matthew
Materials Department University Of California
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Nakamura Shuji
Materials Department University Of California
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Speck James
Materials Department University Of California
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Denbaars Steven
Jst-erato中村pj:ucsb
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Denbaars Steven
Department Of Electrical And Computer Engineering University Of California
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Mishra Umesh
Department Of Electrical And Computer Engineering University Of California
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Hsu Po
Materials Department University Of California
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Fujito Kenji
Optoelectronics Laboratory Mitsubishi Chemical Corporation
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Haeger Daniel
Materials Department University Of California
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Feezell Daniel
Materials Department And Erato Jst Ucsb Group University Of California
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Farrell Robert
Department Of Electrical And Computer Engineering University Of California
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Kelchner Kathryn
Department Of Electrical And Computer Engineering University Of California
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Nakamura Shuji
Department Of Cardiovascular Medicine Hiroshima University Graduate School Of Biomedical Sciences
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Mishra Umesh
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Fujito Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan
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DenBaars Steven
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Feezell Daniel
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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NAKAMURA Shuji
Department of Agricultural Chemistry, Faculty of Agriculture, The University of Tokyo
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