Non-planar Selective Area Growth and Characterization of GaN and AlGaN

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概要

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• Non-planar selective area growth of GaN and Al0.1Ga0.9N was performed by metalorganic chemical vapor deposition, on selectively etched GaN samples masked with SiO2 and AlN. Simultaneous growth on bottom surface and etched side walls occurred, resulting features extending in height above the etched mesa near the mask edge. For GaN, a significant mask-diffusion enhanced growth rate was observed, while for Al0.1Ga0.9N the enhancement was insignificant. The Al composition was investigated near the mask edge, with spectrally resolved cathodoluminescence microscopy, and was found to be lower within 0.6 μm of the mask edge. The electrical properties of GaN was investigated using transmission line model (TLM) structures, near and far from the mask edge. The sheet conductance was found to be greatly enhanced near the mask edge, related to enhanced n-type impurity incorporation during the non-$c$-plane growth in this region. The choice of mask material, SiO2 or AlN, was also shown to influence the sheet conductance.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-10-15

著者

• Denbaars Steven

  Department Of Electrical And Computer Engineering University Of California

• Heikman Sten

  Department Of Electrical And Computer Engineering And Materials Department University Of California

• Bertram Frank

  Institute Of Experimental Physics Otto-von-guericke University

• Christen Jurgen

  Institut Fur Experimentelle Physik Otto-von-guericke Universitat

• Bertram Frank

  Institute of Experimental Physics, Otto-von-Guericke University, P.O. Box 4120, Magdeburg 39016, Germany

• Mishra Umesh

  Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Keller Stacia

  Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Heikman Sten

  Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Christen Jürgen

  Institute of Experimental Physics, Otto-von-Guericke University, P.O. Box 4120, Magdeburg 39016, Germany

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