Keller Stacia | Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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概要
- Keller Staciaの詳細を見る
- 同名の論文著者
- Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.の論文著者
関連著者
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Keller Stacia
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Denbaars Steven
Department Of Electrical And Computer Engineering University Of California
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Keller Stacia
Department Of Electrical And Computer Engineering University Of California
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Department Of Electrical And Computer Engineering University Of California
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Fujiwara Tetsuya
Department Of Electrical And Computer Engineering University Of California
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Speck James
Materials Department University Of California
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DenBaars Steven
Department of Materials Engineering, University of California
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Mishra U
Department Of Electrical And Computer Engineering University Of California
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Keller Stacia
Electrical And Computer Engineering Department University Of California
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Denbaars Steven
Jst-erato中村pj:ucsb
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MISHRA Umesh
Department of Electrical and Computer Engineering, University of California
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Brown David
Department Of Chemical Engineering Faculty Of Engineering Tokyo Institute Of Technology
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Fichtenbaum Nicholas
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Masui Hisashi
Department Of Electrical And Computer Engineering University Of California
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Mishra Umesh
Materiais And Electrical And Computer Engineering University Of Callfornia
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Mishra U.
Materials Department University Of California
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Masui Hisashi
Materials Department College Of Engineering University Of California
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Denbaars Steven
Electrical And Computer Engineering Department University Of California
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FUJIWARA Tetsuya
Department of Electrical and Computer Engineering, University of California
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HIGASHIWAKI Masataka
Department of Electrical and Computer Engineering, University of California
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Denbaars Steven
Nicp/erato Jst Ucsb Group University Of California
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Pei Yi
Department Of Electrical And Computer Engineering University Of California
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Shen Likun
Department Of Electrical And Computer Engineering University Of California
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Nakamura Shuji
Materials Department University Of Cahfornia
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LU Jing
Department of Electrical and Computer Engineering, University of California
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Keller Stacia
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Wu Feng
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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DENBAARS Steven
Electrical and Computer Engineering Department, University of California
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FELLOWS Natalie
Materials Department and Electrical Engineering Department, University of California
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DENBAARS Steven
Materials Department and Electrical Engineering Department, University of California
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Keller Bernd
Nitres
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Speck J
Univ. California California Usa
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Wu Yi-feng
Materials Department University Of California
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Chen Zhen
Department Of Physics Faculty Of Science Hokkaido University
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RAJAN Siddharth
Department of Electrical and Computer Engineering, University of California
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WU Yi-Feng
Nitres
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XU Jane
Department of Electrical and Computer Engineering, University of California
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THIBEAULT Brian
Nitres
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Denbaars Steven
Materials Department University Of California
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Speck James
Erato/jst Ucsb Group
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Xu Jane
Department Of Electrical And Computer Engineering University Of California
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Mccarthy Lee
Departments Of Electrical And Computer Engineering University Of California Santa Barbara
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Chu Rongming
Department Of Electrical And Computer Engineering University Of California
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Heikman Sten
Department Of Electrical And Computer Engineering And Materials Department University Of California
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Bertram Frank
Institute Of Experimental Physics Otto-von-guericke University
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Christen Jurgen
Institut Fur Experimentelle Physik Otto-von-guericke Universitat
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Bierwagen Oliver
Materials Department University Of California
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Yeluri Ramya
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Denninghoff Dan
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Lu Jing
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106
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Yeluri Ramya
Department Of Electrical And Computer Engineering University Of California
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Speck James
Materials Department And Erato/jst Ucsb Group University Of California
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Bertram Frank
Institute of Experimental Physics, Otto-von-Guericke University, P.O. Box 4120, Magdeburg 39016, Germany
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DENNINGHOFF Dan
Department of Electrical and Computer Engineering, University of California
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Mishra Umesh
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Palacios Tomas
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Umesh K.
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Shen Likun
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Furukawa Motoko
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Stacia Keller
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Mccarthy Lee
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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David F.
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Brown David
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Heikman Sten
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Chu Rongming
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Christen Jürgen
Institute of Experimental Physics, Otto-von-Guericke University, P.O. Box 4120, Magdeburg 39016, Germany
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Chung Roy
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Hu Yan-Ling
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
著作論文
- Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
- GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Temperature dependent capacitance-voltage analysis of unintentionally doped and Si doped Al0.82In0.18N grown on GaN
- Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
- Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors
- Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
- Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
- Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal-Organic Chemical Vapor Deposition Using a Graded Growth Strategy
- Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN
- Low Ohmic Contact Resistance $m$-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations