Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
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概要
- 論文の詳細を見る
A recessed slant gate processing has been used in AlGaN/GaN high electron mobility transistors (HEMTs) to mitigate the electric field, minimize the dispersion and increase the breakdown voltage. More than one order of magnitude of decrease in gate leakage has been observed by recessing the slant gate. For a 0.65 μm gate-length device, an extrinsic $ f_{\text{T}}$ of 18 GHz and extrinsic $ f_{\text{MAX}}$ of 52 GHz at a drain bias of 25 V were achieved. At 10 GHz, a state-of-the-art power density of 20.9 W/mm, with a power-added efficiency (PAE) of 40% at a drain bias of 83 V, was demonstrated.
- Japan Society of Applied Physicsの論文
- 2007-12-25
著者
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Keller Stacia
Department Of Electrical And Computer Engineering University Of California
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Chen Zhen
Department Of Physics Faculty Of Science Hokkaido University
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Denbaars Steven
Department Of Electrical And Computer Engineering University Of California
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Mishra Umesh
Department Of Electrical And Computer Engineering University Of California
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Pei Yi
Department Of Electrical And Computer Engineering University Of California
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Shen Likun
Department Of Electrical And Computer Engineering University Of California
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Brown David
Department Of Chemical Engineering Faculty Of Engineering Tokyo Institute Of Technology
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Chu Rongming
Department Of Electrical And Computer Engineering University Of California
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Mishra Umesh
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Fichtenbaum Nicholas
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Keller Stacia
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Keller Stacia
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
-
DenBaars Steven
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Brown David
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Chu Rongming
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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