Lasing Characteristics of InGaP/InGaAIP Visible Lasers Grown by Metalorganic Chemical Vapor Deposition with Tertiarybutylphosphine (TBP)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-11-15
著者
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DenBaars Steven
Department of Materials Engineering, University of California
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Itaya Kazuhiko
Department Of Electrical And Computer Engineering University Of California:toshiba Co. Japan Current
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Denbaars Steven
Department Of Electrical And Computer Engineering University Of California
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Hummel Steven
Department Of Electrical And Computer Engineering University Of California:hewlet-packard Laboratori
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HOLMES Jr.
Department of Electrical and Computer Engineering, University of California
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KILLER Stacia
Department of Electrical and Computer Engineering, University of California
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COLDREN Larry
Department of Electrical and Computer Engineering, University of California
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Coldren Larry
Department Of Electrical And Computer Engineering University Of California
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Holmes Jr.
Department Of Electrical And Computer Engineering University Of California
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Killer Stacia
Department Of Electrical And Computer Engineering University Of California
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DenBaars Steven
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
関連論文
- 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
- 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
- Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
- Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN
- GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Lasing Characteristics of InGaP/InGaAIP Visible Lasers Grown by Metalorganic Chemical Vapor Deposition with Tertiarybutylphosphine (TBP)
- Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
- AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
- Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
- Improvement of Internal Quantum Efficiency in 1.55 μm Laser Diodes with InGaP Electron Stopper Layer
- Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
- Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal-Organic Chemical Vapor Deposition Using a Graded Growth Strategy
- Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN
- Low Ohmic Contact Resistance $m$-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
- Semipolar (20\bar{2}1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
- The fifth overtone spectra of C-H stretching vibrations of C6H5X in nonpolar solvents.