Low Ohmic Contact Resistance $m$-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
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概要
- 論文の詳細を見る
Low ohmic contact resistance $m$-plane AlGaN/GaN heterojunction field-effect transistors were demonstrated using a regrown n+-GaN contact layer. An ohmic contact resistance of 0.25 $\Omega$$\cdot$mm was obtained with an 80-nm-thick Si-doped regrown GaN contact layer deposited by metal organic chemical vapor deposition. Enhancement-mode $m$-plane AlGaN/GaN heterojunction field-effect transistors were demonstrated with a threshold voltage of +1.4 V and 2.0 m$\Omega$$\cdot$cm2 on-state resistances at +5 V of gate--source voltage.
- Japan Society of Applied Physicsの論文
- 2010-10-25
著者
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Denbaars Steven
Department Of Electrical And Computer Engineering University Of California
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Fujiwara Tetsuya
Department Of Electrical And Computer Engineering University Of California
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Keller Stacia
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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