Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications

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概要

• 論文の詳細を見る

• We report on the wafer bonding of an InGaN/GaN LED structure on sapphire to a $p$-type ZnSSe layer grown by molecular beam epitaxy on GaAs as a first step in fabricating III–N resonant cavity structures with II–VI distributed Bragg reflectors. The ZnSSe surface was prepared using thermal and polishing processes to insure a smooth and flat surface. Wafers were successfully bonded in nitrogen at 270°C. The GaAs substrate was then removed and contacts were made to $p$-type GaAs/ZnSSe and $n$-type GaN layers. This wafer bonded GaN based LED was evaluated with current-voltage ($I$–$V$) measurements and electroluminescence (EL) measurements.

• Japan Society of Applied Physicsの論文
• 2004-10-01

著者

• Denbaars Steven

  Nicp/erato Jst Ucsb Group University Of California

• Mccarthy Lee

  Departments Of Electrical And Computer Engineering University Of California Santa Barbara

• Kruse Carsten

  Institute Of Solid State Physics University Of Bremen

• Figge Stephan

  Institute Of Solid State Physics University Of Bremen

• Hommel Detlef

  Institute Of Solid State Physics University Of Bremen

• Murai Akihiko

  Nicp/erato Jst Ucsb Group University Of California

• Mishra Umesh

  Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Mishra Umesh

  Departments of Electrical and Computer Engineering, University of California Santa Barbara, California 93106-5050, U.S.A.

• Kruse Carsten

  Institute of Solid State Physics, University of Bremen, Bremen D-28359, Germany

• McCarthy Lee

  Departments of Electrical and Computer Engineering, University of California Santa Barbara, California 93106-5050, U.S.A.

• Mccarthy Lee

  Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.

• Murai Akihiko

  NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Figge Stephan

  Institute of Solid State Physics, University of Bremen, Bremen D-28359, Germany

• Hommel Detlef

  Institute of Solid State Physics, University of Bremen, Bremen D-28359, Germany

関連論文

• Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures
• Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
• High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
• Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
• Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
• High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
• Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
• Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
• Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
• Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
• Plane Dependent Growth of GaN in Supercritical Basic Ammonia
• Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
• Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
• Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
• Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
• Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
• Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
• GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
• Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
• Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF_4-Treatment
• Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
• AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
• GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
• InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates
• Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy
• m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
• Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes
• Growth of Wide Gap II-VI Materials, Its Characterization and Device Application
• Enhancement-Mode N-Polar GaN Metal--Insulator--Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
• Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers
• Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
• AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
• Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
• Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
• Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
• Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal-Organic Chemical Vapor Deposition Using a Graded Growth Strategy
• Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
• Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
• Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
• Non-planar Selective Area Growth and Characterization of GaN and AlGaN
• AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit
• Low Ohmic Contact Resistance $m$-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
• Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes

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