AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, AlGaN channels for high electron mobility transistors (HEMTs) have been evaluated based on a power device figure of merit. AlGaN-channel HEMTs grown on SiC substrates by plasma-assisted molecular beam epitaxy (PAMBE) were fabricated. Maximum saturation current of 0.55 A/mm was obtained at $V_{\text{GS}}=1$ V. Current-gain cutoff ($ f_{\text{t}}$) and power-gain cutoff ($ f_{\text{max}}$) frequencies obtained from small signal measurements were $ f_{\text{t}}=13.2$ GHz and $ f_{\text{max}}=41$ GHz. Pulsed current–voltage ($I$–$V$) measurements at 200 ns showed no dispersion in $I$–$V$ curves. Large signal continuous wave (CW) measurement yielded an output power density of 4.5 W/mm with power added efficiency (PAE) of 59% at 4 GHz. This work demonstrates the potential of AlGaN channel HEMTs for high voltage switching and microwave power applications.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-05-25
著者
-
SPECK James
Department of Materials, University of California
-
Dasgupta Sansaptak
Department Of Electrical And Computer Engineering University Of California
-
Raman Ajay
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
-
Rajan Siddharth
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
-
Mishra Umesh
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
-
Dasgupta Sansaptak
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
-
Rajan Siddhalth
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
-
Speck James
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
関連論文
- Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
- GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
- Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF_4-Treatment
- Enhancement-Mode N-Polar GaN Metal--Insulator--Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
- Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers
- Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
- AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
- Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
- Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
- Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal-Organic Chemical Vapor Deposition Using a Graded Growth Strategy
- Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN
- AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit
- Low Ohmic Contact Resistance $m$-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations