Enhancement-Mode N-Polar GaN Metal--Insulator--Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
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概要
- 論文の詳細を見る
We report the small-signal high-frequency performance of novel enhancement-mode N-polar GaN metal--insulator--semiconductor field effect transistors with a peak short-circuit current gain cutoff frequency ($f_{\text{t}}$) of 120 GHz for a 70-nm gate length device. The device has an 8-nm GaN channel with AlN back barrier and a 5-nm SiNx gate dielectric. These devices show a peak drain current of 0.74 A/mm and peak transconductance of 260 mS/mm at a drain bias of 3.0 V. This is the first demonstration of high-frequency operation of N-polar enhancement-mode GaN devices.
- 2011-02-25
著者
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Wong Man
Department Of Electrical And Computer Engineering University Of California
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Dasgupta Sansaptak
Department Of Electrical And Computer Engineering University Of California
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Wong Man
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Singisetti Uttam
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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