DOPANT ACTIVATION IN POLY-SI_<1-x>GE_x AT LOW TEMPERATURE
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概要
- 論文の詳細を見る
Isothermal annealing of boron or phosphorus implanted plycrystalline Si_<1-x>Ge_x thin films, with x varying from 0.3 to 0.55 was studied in this paper. In low temperature (<=600)℃) annealing, grain boundary segregation causes both the conductivity and the Hall mobility to decrease during extended annealing. The effective activation of phosphorus was less than 20% and decreases with increasing Ge content. Boron activation could reach above 70%. It was also found that Si_<1-x>Ge_x could be oxidized at 600℃ in a conventional furnace even with pure N_2 protection.
- 社団法人電子情報通信学会の論文
- 1997-02-13
著者
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Yeung Milton
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
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Kwok Hoi
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
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WONG Man
Department of Electrical and Computer Engineering, University of California
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王 文
香港科技大學電機及電子工程系
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孟 志國
香港科技大學電機及電子工程系
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Wong M
Hong Kong Univ. Sci. And Technol. Kowloon Hkg
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Gururaj Bhat
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
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Kwok H
The Hong Kong University Of Science And Technology
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Wong Man
Department Of Electrical And Computer Engineering University Of California
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Kwok Hoi
Department Of Chemistry And Center For Display Research Hong Kong University Of Science & Techno
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JIN Zhonghe
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technol
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MENG Zhiguo
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technol
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Jin Zhonghe
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
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金 仲和
香港科技大學電機及電子工程系
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Meng Zhiguo
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
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Bhat Gururaj
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
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