SA-10-6(106) The Use of CDM Analysis Techniques in High Temperature Creep Failure of Welded Structures(Damage Mechanics)
スポンサーリンク
概要
- 論文の詳細を見る
Techniques are reviewed for the calibration of constitutive relationships for the different phases of the weld. It is shown how the calibration is carried out using property ratios, and a knowledge of the constitutive equations of the parent material. The results of CDM analyses, obtained using the two-dimensional solver Damage XX, are reviewed for : a butt-welded pipe at 565℃ ; and, a welded cylinder-sphere pipe intersection at 590℃. Results are then presented of a three-dimensional CDM solution for a three-degree slice of the welded cylinder-sphere pipe intersection, and shown to be in close agreement with the two-dimensional, Damage XX, solution. Then the paper examines damage growth at a constant temperature of 590℃ in a ferritic steel butt-welded pipe subjected to a combined constant internal pressure of 4 MPa and a constant global bending moment of 49 kNm. The CDM results for a three-dimensional analysis are compared with qualitative experimental results, and good correlation is indicated.
- 一般社団法人日本機械学会の論文
- 2001-06-03
著者
-
Wong Man
Department Of Mechanical Engineering Umist
-
Wong Man
Department Of Electrical And Computer Engineering University Of California
-
HAYHURST David
Department of Mechanical Engineering UMIST
-
Vakili-TAHAMI Farid
Department of Mechanical Engineering UMIST
関連論文
- Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
- Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF_4-Treatment
- Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on Si0_2
- 多晶〓硅薄膜中的雜質激活
- DOPANT ACTIVATION IN POLY-SI_GE_x AT LOW TEMPERATURE
- The Effect of Rigid Versus Flexible Spinal Orthosis on the Clinical Efficacy and Acceptance of the Patients With Adolescent Idiopathic Scoliosis
- Enhancement-Mode N-Polar GaN Metal--Insulator--Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
- The Use of CDM Analysis Techniques in High Temperature Creep Failure of Welded Structures(Special Issue on Creep and Fatigue at Elevated Temperatures)
- SA-10-6(106) The Use of CDM Analysis Techniques in High Temperature Creep Failure of Welded Structures(Damage Mechanics)
- On the Body-Thickness Dependence of the Linearly Extrapolated Threshold Voltage of a Double-Gate Metal–Oxide–Semiconductor Field-Effect Device
- Hydrogenation Effects on the Hot-Carrier Endurance of Metal Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin Film Transistors