On the Body-Thickness Dependence of the Linearly Extrapolated Threshold Voltage of a Double-Gate Metal–Oxide–Semiconductor Field-Effect Device
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概要
- 論文の詳細を見る
An approximate but simple expression explicitly relating the surface potential to the surface electric field of a symmetrical double-gate metal–oxide–semiconductor field-effect device is used to derive a compact expression for the linearly extrapolated threshold voltage $V_{\text{Te}}$ of such a device with a uniformly doped channel region. The expression is shown to be valid for both partially and fully depleted devices. $V_{\text{Te}}$ is predicted to exhibit a global minimum as the thickness of the channel is systematically increased.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-12-15
著者
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Wong Man
Department Of Electrical And Computer Engineering University Of California
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Chow Thomas
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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Shi Xuejie
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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Wong Man
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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