Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF_4-Treatment
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2008-06-25
著者
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Speck James
Materials Department University Of California
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Mishra U
Department Of Electrical And Computer Engineering University Of California
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MISHRA Umesh
Department of Electrical and Computer Engineering, University of California
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RAJAN Siddharth
Department of Electrical and Computer Engineering, University of California
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CHU Rongming
Department of Electrical and Computer Engineering, University of California
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POBLENZ Christiane
Department of Materials, University of California
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WONG Man
Department of Electrical and Computer Engineering, University of California
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DASGUPTA Sansaptak
Department of Electrical and Computer Engineering, University of California
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PEI Yi
Department of Electrical and Computer Engineering, University of California
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RECHT Felix
Department of Electrical and Computer Engineering, University of California
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SHEN Likun
Department of Electrical and Computer Engineering, University of California
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SPECK James
Department of Materials, University of California
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Pei Yi
Department Of Electrical And Computer Engineering University Of California
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Wong Man
Department Of Electrical And Computer Engineering University Of California
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Shen Likun
Department Of Electrical And Computer Engineering University Of California
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Recht Felix
Department Of Electrical And Computer Engineering University Of California
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Chu Rongming
Department Of Electrical And Computer Engineering University Of California
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Dasgupta Sansaptak
Department Of Electrical And Computer Engineering University Of California
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Mishra Umesh
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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