High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2007-02-25

著者

• Nakamura Shuji

  Materials Department University Of California

• Tyagi Anurag

  Solid State Lighting And Energy Center Materials Department University Of California

• Tyagi Anurag

  Electrical And Computer Engineering And Materials Departments University Of California

• Speck James

  Materials Department University Of California

• DENBAARS Steven

  Electrical and Computer Engineering Department, University of California

• NAKAMURA Shuji

  Electrical and Computer Engineering Department, University of California

• Speck J

  Univ. California California Usa

• Denbaars Steven

  Jst-erato中村pj:ucsb

• SPECK James

  Electrical and Computer Engineering and Materials Departments, University of California

• Fellows Natalie

  Solid State Lighting And Energy Center Materials Department University Of California

• Denbaars Steven

  Electrical And Computer Engineering Department University Of California

• ZHONG Hong

  Electrical and Computer Engineering and Materials Departments, University of California

• FELLOWS Natalie

  Electrical and Computer Engineering and Materials Departments, University of California

• IZA Michael

  Electrical and Computer Engineering and Materials Departments, University of California

• Denbaars Steven

  Electrical And Computer Engineering And Materials Departments University Of California

• Denbaars Steven

  Materials Department University Of California

• Nakamura Shuji

  Electrical And Computer Engineering Department University Of California

• Speck James

  Erato/jst Ucsb Group

• Iza Michael

  Electrical And Computer Engineering And Materials Departments University Of California

• Zhong Hong

  Electrical And Computer Engineering And Materials Departments University Of California

• Speck James

  Materials Department And Erato/jst Ucsb Group University Of California

• SPECK J.

  Materials Department, University of California, Santa Barbara

• Speck James

  Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.

関連論文

• Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures
• Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
• High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
• Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
• Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
• 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
• 28aPS-18 c面およびa面GaNにおける励起子の緩和ダイナミクス(28aPS 領域5ポスターセッション,領域5(光物性))
• 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
• High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
• Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
• Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
• Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
• Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
• Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
• Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
• Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
• Plane Dependent Growth of GaN in Supercritical Basic Ammonia
• Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
• Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
• Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
• Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
• Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
• Growth of AlN by the Chemical Vapor Reaction Process
• Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
• Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
• Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
• High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
• Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
• Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
• Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
• High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
• Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
• Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
• Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
• Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
• GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
• Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
• Spiral Growth of InGaN Nanoscale Islands on GaN
• Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
• Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
• Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
• Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl_2O_4 by Metalorganic Chemical Vapor Deposition
• Effects of Phosphor Application Geometry on White Light-Emitting Diodes
• Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate
• Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime
• Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF_4-Treatment
• Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
• Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
• Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors
• Selective Area Mass Transport Regrowth of Gallium Nitride
• Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
• MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors
• The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganie Chemical Vapor Deposition
• Morphological and Structural Transitions in GaN Filrms Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
• GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
• Characterization of a-Plane GaN/(Al, Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
• Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO_2
• Non-Alloyed Schottky and Ohmic Contacts to As-Grown and Oxygen-Plasma Treated n-Type SnO_2 (110) and (101) Thin Films
• InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates
• Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy
• m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
• Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy
• Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
• Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
• High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes : Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals
• AlGaN-Claddingb-free nonpolar InGaN/GaN laser diodes
• Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy
• Ohmic Cathode Electrode on the Backside of $m$-Plane and ($20\bar{2}1$) Bulk GaN Substrates for Optical Device Applications
• High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
• High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-$c$-Plane Oriented GaN Substrates
• 30-mW-Class High-Power and High-Efficiency Blue Semipolar (1011) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
• Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
• Critical Thickness for Onset of Plastic Relaxation in $(11\bar{2}2)$ and $(20\bar{2}1)$ Semipolar AlGaN Heterostructures
• High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar $(10\bar{1}\bar{1})$ Bulk GaN Substrates
• Determination of Composition and Lattice Relaxation in Semipolar Ternary (In, Al, Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements
• Substrate Reactivity and "Controlled Contamination" in Metalorganic Chemical Vapor Deposition of GaN on Sapphire
• Light Emitting Diodes with ZnO Current Spreading Layers Deposited from a Low Temperature Aqueous Solution
• Erratum: “Increased Polarization Ratio on Semipolar ($11\bar{2}2$) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition”
• AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
• Propagation of Spontaneous Emission in Birefringent $m$-Axis Oriented Semipolar ($11\bar{2}2$) (Al,In,Ga)N Waveguide Structures
• Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
• Optimization of Device Structures for Bright Blue Semipolar ($10\bar{1}\bar{1}$) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition
• 30-mW-Class High-Power and High-Efficiency Blue Semipolar ($10\bar{1}\bar{1}$) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
• Semipolar Single-Crystal ZnO Films Deposited by Low-Temperature Aqueous Solution Phase Epitaxy on GaN Light-Emitting Diodes
• Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes
• High-Power, Low-Efficiency-Droop Semipolar (2021) Single-Quantum-Well Blue Light-Emitting Diodes
• Optical Characterization of Double Peak Behavior in {10\bar{1}1} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates
• Demonstration of Nonpolar $m$-Plane InGaN/GaN Laser Diodes
• High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate
• Impact of Substrate Miscut on the Characteristic of $m$-plane InGaN/GaN Light Emitting Diodes
• Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (2021) Blue Light-Emitting Diodes
• Demonstration of Distributed Bragg Reflectors for Deep Ultraviolet Applications
• Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
• Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films
• Increased Polarization Ratio on Semipolar ($11\bar{2}2$) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition
• Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown $a$-Plane GaN
• Hexagonal Truncated Pyramidal Light Emitting Diodes through Wafer Bonding of ZnO to GaN, Laser Lift-off, and Photo Chemical Etching
• Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates

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