Increased Polarization Ratio on Semipolar ($11\bar{2}2$) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition

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概要

• 論文の詳細を見る

• Optical properties of InGaN/GaN light-emitting diode (LED) samples prepared on the ($11\bar{2}2$) surface of bulk GaN were investigated. Four samples were prepared with increasing indium concentrations. The LEDs emitted at 527, 531, 556, and 568 nm at 20 mA dc. Their optical polarization ratios were measured and the samples with higher In showed a higher ratio than the shorter wavelength ones. A polarization ratio of 0.65 was measured for the longest wavelength sample. This suggests that the more In incorporated into the quantum well layers leads to an increase in the splitting of the valence subband levels.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-10-25

著者

• NAKAMURA Shuji

  Solid State Lighting and Energy Center, Materials Department, University of California

• DENBAARS Steven

  Solid State Lighting and Energy Center, Materials Department, University of California

• Fellows Natalie

  Solid State Lighting And Energy Center Materials Department University Of California

• Masui Hisashi

  Solid State Lighting And Energy Center Materials Department University Of California

• Masui Hisashi

  Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara, CA 93106-5055, U.S.A.

• Sato Hitoshi

  Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara, CA 93106-5055, U.S.A.

• DenBaars Steven

  Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara, CA 93106-5055, U.S.A.

• Fellows Natalie

  Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara, CA 93106-5055, U.S.A.

• DenBaars Steven

  Solid State Lighting and Display Center, University of California, Santa Barbara, CA 93106, U.S.A.

関連論文

• Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures
• Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
• High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
• Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
• High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
• High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
• Customized Filter Cube in Fluorescence Microscope Measurements of InGaN/GaN Quantum-Well Characterization
• Erratum: “Increased Polarization Ratio on Semipolar ($11\bar{2}2$) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition”
• Continuous-wave Operation of AlGaN-cladding-free Nonpolar $m$-Plane InGaN/GaN Laser Diodes
• Increased Polarization Ratio on Semipolar ($11\bar{2}2$) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition

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