Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-10-15
著者
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Speck James
Materials Department University Of California
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PETROFF Pierre
Materials Department, University of California
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DENBAARS Steven
Electrical and Computer Engineering Department, University of California
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Mishra U
Department Of Electrical And Computer Engineering University Of California
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DENBAARS Steven
Materials Department and Electrical Engineering Department, University of California
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Petroff P
Univ. California California Usa
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Petroff Pierre
Materiais And Electrical And Computer Engineering University Of Callfornia
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Petroff Pierre
Materials Department University Of California Santa Barbara
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Mishra Umesh
Materiais And Electrical And Computer Engineering University Of Callfornia
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Mishra U.
Materials Department University Of California
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Speck J
Univ. California California Usa
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Heying Benjamin
Solid State Lighting And Display Center University Of California
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Denbaars Steven
Jst-erato中村pj:ucsb
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Denbaars Steven
Materials Department University Of California
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ELSASS Christopher
Materiais and Electrical and Computer Engineering, University of Callfornia
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POBLENZ Christiane
Materiais and Electrical and Computer Engineering, University of Callfornia
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HEYING Ben
Materiais and Electrical and Computer Engineering, University of Callfornia
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FINI Paul
Materiais and Electrical and Computer Engineering, University of Callfornia
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SAXLER Adam
AFRLIMLPS, Wright-Patterson Air Force Base
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ELHAMRIB Said
AFRLIMLPS, Wright-Patterson Air Force Base
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MITCHEL William
AFRLIMLPS, Wright-Patterson Air Force Base
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SMORCHKOVA Iolia
Materials and Electrical and Computer Engineering, University of California
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HAUS Erik
Materials and Electrical and Computer Engineering, University of California
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MARANOWSKI Kevin
Materials and Electrical and Computer Engineering, University of California
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ELHAMRI Said
MLPS, Wright-Patterson Air Force Base
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Speck James
Erato/jst Ucsb Group
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Elhamrib Said
Afrlimlps Wright-patterson Air Force Base
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Fini P.
Materiais And Electrical And Computer Engineering University Of Callfornia
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Haus Erik
Materials And Electrical And Computer Engineering University Of California
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Heying B.
Solid State Lighting And Display Center University Of California
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Saxler Adam
Afrlimlps Wright-patterson Air Force Base
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Maranowski Kevin
Materials And Electrical And Computer Engineering University Of California
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Smorchkova Iolia
Materials And Electrical And Computer Engineering University Of California
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Poblenz Christiane
Soraa Inc.
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Mitchel William
Afrlimlps Wright-patterson Air Force Base
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Elsass Christopher
Materiais And Electrical And Computer Engineering University Of Callfornia
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Poblenz Christiane
Materiais And Electrical And Computer Engineering University Of Callfornia
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Speck James
Materials Department And Erato/jst Ucsb Group University Of California
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SPECK J.
Materials Department, University of California, Santa Barbara
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
関連論文
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- Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
- 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
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- 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
- Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
- Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
- Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
- Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
- Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
- Plane Dependent Growth of GaN in Supercritical Basic Ammonia
- Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
- Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
- Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
- Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
- Growth of AlN by the Chemical Vapor Reaction Process
- Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
- Growth and Electronic Properties of Self-Organized Quantum Rings
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- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
- Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
- Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
- Size Quantization and Zero Dimensional Effects in Self Assembled Semiconductor Quantum Dots ( Quantum Dot Structures)
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
- Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN
- GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
- Spiral Growth of InGaN Nanoscale Islands on GaN
- Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
- Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
- Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl_2O_4 by Metalorganic Chemical Vapor Deposition
- Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
- Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate
- Optical Up-Conversion Processes in InAs Quantum Dots
- Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots
- Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime
- Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF_4-Treatment
- Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
- Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
- Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
- Selective Area Mass Transport Regrowth of Gallium Nitride
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors
- Morphological and Structural Transitions in GaN Filrms Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
- GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
- Characterization of a-Plane GaN/(Al, Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
- Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO_2
- Non-Alloyed Schottky and Ohmic Contacts to As-Grown and Oxygen-Plasma Treated n-Type SnO_2 (110) and (101) Thin Films
- InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates
- Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy
- m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
- Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
- High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes : Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals
- AlGaN-Claddingb-free nonpolar InGaN/GaN laser diodes
- Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy
- High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar ($20\bar{2}1$) GaN Substrates
- 30-mW-Class High-Power and High-Efficiency Blue Semipolar (1011) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
- Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
- Critical Thickness for Onset of Plastic Relaxation in $(11\bar{2}2)$ and $(20\bar{2}1)$ Semipolar AlGaN Heterostructures
- Enhancing the Light Extraction Efficiency of Blue Semipolar $(10\bar{1}\bar{1})$ Nitride-Based Light Emitting Diodes through Surface Patterning
- Determination of Composition and Lattice Relaxation in Semipolar Ternary (In, Al, Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements
- Substrate Reactivity and "Controlled Contamination" in Metalorganic Chemical Vapor Deposition of GaN on Sapphire
- Electroluminescence Characterization of ($20\bar{2}1$) InGaN/GaN Light Emitting Diodes with Various Wavelengths
- Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
- AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
- Propagation of Spontaneous Emission in Birefringent $m$-Axis Oriented Semipolar ($11\bar{2}2$) (Al,In,Ga)N Waveguide Structures
- Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
- Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
- Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents
- Semipolar Single-Crystal ZnO Films Deposited by Low-Temperature Aqueous Solution Phase Epitaxy on GaN Light-Emitting Diodes
- High-Power, Low-Efficiency-Droop Semipolar (2021) Single-Quantum-Well Blue Light-Emitting Diodes
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature
- Demonstration of Nonpolar $m$-Plane InGaN/GaN Laser Diodes
- High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate
- Impact of Substrate Miscut on the Characteristic of $m$-plane InGaN/GaN Light Emitting Diodes
- Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (2021) Blue Light-Emitting Diodes
- Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk $m$-Plane GaN Substrate
- Effects of Phosphor Application Geometry on White Light-Emitting Diodes
- Photoelectrochemical Properties of Nonpolar and Semipolar GaN
- Growth and Electronic Properties of Self-Organized Quantum Rings
- Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots