Optical Up-Conversion Processes in InAs Quantum Dots
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-01
著者
-
PETROFF Pierre
Materials Department, University of California
-
Petroff P
Univ. California California Usa
-
Petroff Pierre
Materiais And Electrical And Computer Engineering University Of Callfornia
-
Petroff Pierre
Materials Department University Of California Santa Barbara
-
GARCIA Jorge
Materials Department and QUEST, University of California
-
PASKOV Plamen
Department of Physics and Measurement Technology, Linkoping University
-
HOLTZ Per-Olof
Department of Physics and Measurement Technology, Linkoping University
-
MONEMAR Bo
Department of Physics and Measurement Technology, Linkoping University
-
SCHOENFELD Winston
Materials Department, University of California, Santa Barbara
-
Garcia Jorge
Materials Department And Quest University Of California
-
Monemar Bo
Department Of Physics And Measurement Technology Linkoping University
-
Paskov Plamen
Department Of Physics And Measurement Technology Linkoping University
-
Holtz Per-olof
Department Of Physics And Measurement Technology Linkoping University
-
Schoenfeld Winston
Materials Department University Of California Santa Barbara
-
Garcia Jorge
Materials Department University Of California Santa Barbara
関連論文
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Growth and Electronic Properties of Self-Organized Quantum Rings
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
- Size Quantization and Zero Dimensional Effects in Self Assembled Semiconductor Quantum Dots ( Quantum Dot Structures)
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
- Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
- Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
- Optical Up-Conversion Processes in InAs Quantum Dots
- Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots
- Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers
- Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN
- Spontaneous Formation of AlInN Core-Shell Nanorod Arrays by Ultrahigh-Vacuum Magnetron Sputter Epitaxy
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- High-Quality 2$''$ Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
- Growth and Electronic Properties of Self-Organized Quantum Rings
- Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots
- Effect of High NH
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
- Effect of High NH₃ Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates (Special Issue : Recent Advances in Nitride Semiconductors)