Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-01
著者
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PETROFF Pierre
Materials Department, University of California
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Petroff P
Univ. California California Usa
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Petroff Pierre
Materials Department University Of California Santa Barbara
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GARCIA Jorge
Materials Department and QUEST, University of California
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PASKOV Plamen
Department of Physics and Measurement Technology, Linkoping University
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HOLTZ Per-Olof
Department of Physics and Measurement Technology, Linkoping University
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MONEMAR Bo
Department of Physics and Measurement Technology, Linkoping University
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SCHOENFELD Winston
Materials Department, University of California, Santa Barbara
関連論文
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- Growth and Electronic Properties of Self-Organized Quantum Rings
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
- Size Quantization and Zero Dimensional Effects in Self Assembled Semiconductor Quantum Dots ( Quantum Dot Structures)
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
- Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
- Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
- Optical Up-Conversion Processes in InAs Quantum Dots
- Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots