Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-09-15
著者
-
PETROFF Pierre
Materials Department, University of California
-
Petroff Pierre
Materiais And Electrical And Computer Engineering University Of Callfornia
-
Petroff Pierre
Materials Department And Quest University Of California
-
Suga Tadatomo
Research Center For Advanced Science And Technology University Of Tokyo
-
SOMEYA Takao
Research Center for Advanced Science and Technology and Institute of Industrial Science, University
-
YUSA Go
Research Center for Advanced Science and Technology, University of Tokyo
-
NOGE Hiroshi
Quantum Transition Project JRDC
-
KADOYA Yutaka
Quantum Transition Project JRDC
-
SAKAKI Hiroyuki
Research Center for Advanced Science and Technology, University of Tokyo
-
Sakaki H
Univ. Tokyo Tokyo Jpn
-
Yusa Go
Research Center For Advanced Science And Technology University Of Tokyo
-
Noge Hiroshi
Rcast University Of Tokyo:quantum Transition Project Jrdc
-
Yutaka Kadoya
Department Of Quantum Matter Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
Kadoya Yutaka
Department Of Quantum Matter Adsm Hiroshima University
-
Suga Tadatomo
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
-
Sakaki Hiroyuki
Research Center For Advanced Science And Technology (rcast) University Of Tokyo:institute Of Industr
関連論文
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- THz Electromagnetic Wave Radiation from Bulk Semiconductor Microcavities Excited by Short Laser Pulses : Optics and Quantum Electronics
- Investigation of the Polarization-Induced Charges in Modulatlon Doped Al_xGa_N/GaN Heterostructures through Capacitance-Voltage Profiling and Simulation
- Influence of Ferroelectric Polarization on the Properties of Two-Dimensional Electron Gas in Pb(Zr_Ti_)O_3/Al_xGa_N/GaN Structures
- Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD
- Fractional Quantum Hall Effect at ν=1/7
- Growth and Electronic Properties of Self-Organized Quantum Rings
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
- Size Quantization and Zero Dimensional Effects in Self Assembled Semiconductor Quantum Dots ( Quantum Dot Structures)
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
- Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
- Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
- Optical Up-Conversion Processes in InAs Quantum Dots
- Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots
- Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)
- Phototransistors Using Point Contact Structures
- Phototransistors Using Point Contact Structures
- Molecular Beam Epitaxial Growth of InGaAs Quantum Welts on (110) GaAs Surfaces
- Effect of Intense Intersubband Optical Excitation on the Electron Distribution in GaAs/AlAs Quantum Wells
- Etching of InAs in HCl Gas and Selective Removal of InAs Layer on GaAs in Ultrahigh-Vacuum Processing System
- Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy
- Formation of Two-Dimensional Electron Gas in N-AlGaAs/GaAs Heterojunctions on (111)B Microfacets Grown by Molecular Beam Epitaxy on a Patterned (001) Substrate
- Room-Temperature Bonding of Si Wafers to Pt Films on SiO_2 or LiNbO_3 Substrates Using Ar-Beam Surface Activation
- Transmission Electron Microscope Observations of Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation
- Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation
- Possible Polaron Effect in Complex Terahertz Conductivity of Electron-Doped Nanoporous Crystal 12CaO・7Al_2O_3(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Microfabricated Dynamic Scanning Force Microscope Using a Three Dimensional Piezoelectric T-shape Actuator
- Tip-Scanning Dynamic Force Microscope Using Piezoelectric Cantilever for Full Wafer Inspection
- Electronic States in Edge Quantum Wires on GaAs/AlGaAs Facet Structures
- Activation Energies of the Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures
- Anomalous Magnetoresistance in Perpendicular Magnetic Fields Observed in High Mobility GaAs/Al_xGa_As Interfaces
- Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
- Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
- Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-Al_xGa_As (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
- Coherent Dynamics of Excitons in an Island-Inserted GaAs/AlAs Quantum Well Structure : Suppression of Phase Relaxation and a Deep Quantum Beat
- Evaluation of Carrier Dynamics in n-Al_xGa_As Films by Terahertz Time-Domain Spectroscopy with Characteristic-Matrix Analysis
- Generation of Heralded Twin-Photons in a Series-Coupled Mesoscopic Light-Emitting Diode System
- Photon-Number Squeezing in a Light-Emitting Diode Driven by a Constant-Voltage Source : Pump Regulation by the Non-Coulombic Effect
- Effect of Ionized Impurities at Heterointerface on Concentration and Mobility of Two-Dimensional Electrons in Selectively Doped Heterojunction Structures
- Piezoelectric Sensor for Detecting Force Gradients in Atomic Force Microscopy
- Scanning Force Microscope Using Piezoelectric Excitation and Detection
- Quantum Wire Superlattices and Coupled Quantum Box Arrays: A Novel Method to Suppress Optical Phonon Scattering in Semiconductors
- Second Activation Energy in the Fractional Quantum Hall Effect
- Piezoelectric Microcantilever Array for Multiprobe Scanning Force Microscopy (Special Issue on Micromachine Technology)
- Feasibility of Direct Bonding Between CMP-Cu Films at Room Temperature for Bumpless Interconnect
- Microassembly System for Integration of MEMS Using the Surface Activated Bonding Method (Special Issue on Micromachine Technology)
- Low-Resistivity Contact of YBa_2Cu_3O_/Al Joint Bonded at Room Temperature
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Growth and Electronic Properties of Self-Organized Quantum Rings
- Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots
- Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy