Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
GaAs trapezoidal structures grown by molecular beam epitaxy on mesa-patterned (001) substrates have been studied by atomic force microscopy to clarify the morphology of (111)B facet planes. It is found that multi-atomic steps of 1–4 nm in height Δ appear on the facets with typical periods Λ of 30–60 nm. When the mis-orientation angle Δθ of mesa-stripes with respect to [110] increases from 2° to 7°, the corrugation height Δ is found to increase monotonically. Thus the mis-orientation angle Δθ must be minimized to form smooth facet structures.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-07-15
著者
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Noge Hiroshi
Rcast University Of Tokyo:quantum Transition Project Jrdc
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TAKEUCHI Norishige
Nikon Corporation
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KOSHIBA Shyun
RCAST, University of Tokyo
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SAKAKI Hiroyuki
RCAST, University of Tokyo
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Nakamura Yusui
Rcast University Of Tokyo:quantum Transition Project Jrdc:quantum Wave Project Jrdc
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Tanaka Ichiro
Rcast University Of Tokyo:quantum Transition Project Jrdc
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Nakamura Yusui
RCAST, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan
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Noge Hiroshi
RCAST, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan
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- Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy