Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
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概要
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We report the quantum dot infrared photodetector using the modulation dopedInAs self-assembledquantum dots. By modulation doping, it is possible to remove the effect ofthe dopants on the energylevel in InAs dots and to attribute clearly the infrared photocurrent to the carrier excitation in InAsdots. The infrared photocurrent in the detector was clearly observed up to30 K. The peak energyand the polarization dependence of the infrared photocurrent are comparableto the infrared electronexcitation from the ground state in InAs dots to the conduction band edge ofGaAs barriers.
- 1999-04-30
著者
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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FUTATSUGI Toshiro
Fujitsu Laboratories Ltd.
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HORIGUCHI Naoto
Fujitsu Laboratories Ltd.
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Petroff Pierre
Materiais And Electrical And Computer Engineering University Of Callfornia
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Mankad Tanaya
Materials Department University Of California
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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Nakata Yoshiaki
Fujitsu Laboratories Ltd.,
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Horiguchi Naoto
Fujitsu Laboratories Ltd.,
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