Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
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概要
- 論文の詳細を見る
We have investigated cleaved-edge photoluminescence (PL) polarization properties of InAs/GaAs quantum dot (QD) traveling-type semiconductor optical amplifiers (SOAs). Transverse-electric (TE) and transverse magnetic (TM) mode PL intensities of the devices have been examined. TE-mode PL intensity of QD-SOA is observed to be much stronger than TM-mode. The results indicate that the valence band edge of the QDs is heavy-hole like. Temperature dependence on the PL polarization properties of QD-SOA has been carried out and analyzed. It is observed that an enhancement of TM-mode PL intensity of QD-SOA at higher temperature is due to the fact that the inhomogeneous thermal strain induced effect.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Jayavel Pachamuthu
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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EBE Hiroji
Research Center for Advanced Science and Technology, University of Tokyo
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SUGAWARA Mitsuru
Research Center for Advanced Science and Technology, University of Tokyo
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AKIYAMA Tomoyuki
Fujitsu Laboratories Ltd.
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Wada Osamu
Department Of Applied Quantum Physics Kyushu University
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Arakawa Yasuhiko
Research Center For Advanced Science And Technology And Institute Of Industrial Science University O
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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Kita Takashi
Department Of Anesthesiology Osaka Police Hospital
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Akiyama Tomoyuki
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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