Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 μm bands
スポンサーリンク
概要
- 論文の詳細を見る
We calculated the interband optical transition energies in self-assembled InxGa1-xAs quantum dots on InP as functions of the strain, composition, and height of dots on the basis of the $\mathbf{k}\cdot\mathbf{p}$ perturbation theory. We found that a transverse-magnetic (TM)-mode-sensitive optical transition at wavelengths in the range from 1.5 to 1.6 μm is achieved due to the light-hole valence band when the crystal lattice is expanded in the same direction of growth as the in-plane lattice matched to the substrate at $x\leq 0.4$, or when the lattice is compressed in the growth direction with the in-plane lattice relaxed at $x\geq 0.6$. We propose barrier structures covering the dots in order to realize these conditions, leading to TM-mode-sensitive quantum dots for polarization-independent optical amplifiers.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-08-15
著者
-
AKIYAMA Tomoyuki
Fujitsu Laboratories Ltd.
-
Ekawa Mitsuru
Fujitsu Laboratories Ltd.
-
Kuramata Akito
Fujitsu Laboratories Limited
-
Nakata Yoshiaki
Fujitsu Laboratories Limited
-
Sugawara Mitsuru
Institute Of Industrial Science (iis) The University Of Tokyo
-
Ebe Hiroji
Institute Of Industrial Science (iis) The University Of Tokyo
-
Kawaguchi Kenichi
Fujitsu Laboratories Limited
-
Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
-
Uetake Ayahito
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
-
Ebe Hiroji
Institute of Industrial Science (IIS), University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Kuramata Akito
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
-
Akiyama Tomoyuki
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
-
Kawaguchi Kenichi
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
-
Kawaguchi Kenichi
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
-
Sugawara Mitsuru
Institute of Industrial Science (IIS), University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Ekawa Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
-
Ekawa Mitsuru
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
関連論文
- Esaki diodes live and learn
- Photonic Crystal Nanocavity Continuous-wave Laser Operation at Room Temperature
- Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands
- Single-Photon Generation in the 1.55-μm Optical-Fiber Band from an InAs/InP Quantum Dot
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
- Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
- Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
- Interdiffusion between InAs Quantum Dots and GaAs Matrices
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Automatically-Controlled C-Band Wavelength Conversion with Constant Output Power Based on Four-Wave Mixing in SOA's(Lasers, Quantum Electronics)
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
- Control of In_xGa_As Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
- Density Control of GaSb/GaAs Self-assembled Quantum Dots (〜25nm) Grown by Molecular Beam Epitaxy
- Continuous Wave Operation at Room Temperature of InGaN Laser Diodes Fabricated on 4H-SiC Substrates
- Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate
- Continuous-Wave Operation at 250 K of InGaN Multiple Quantum Well Laser Diodes Grown on 6H-SiC with Vertical Conducting Structure
- InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
- Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
- Vertical Microcavity Lasers with InGaAs/GaAs Quantum Dots Formed by Spinodal Phase Separation
- Area Density Control of Quantum-Size InGaAs/Ga(Al)As Dots by Metalorganic Chemical Vapor Deposition
- Light Emission from Individual Self-Assembled InAs/GaAs Quantum Dots Excited by Tunneling Current Injection
- Formation of InGaAs Quantum Dots on GaAs Multi-Atomic Steps by Metalorganic Chemical Vapor Deposition Growth
- Energy-Band Offset of In_Ga_As-In_(Ga_AI_x)_As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy
- Defect Modes in Two-Dimensional Triamgular Photonic Crystals
- Lasing Emission from an In_Ga_N Vertical Cavity Surface Emitting Laser
- Phototransistors Using Point Contact Structures
- Phototransistors Using Point Contact Structures
- Tarahertz Emission from Quantum Beats in Coupled Quantum Wells
- Terahertz Emission from Quantum Beats in Coupled Quantum Wells
- Investigation of the Spectral Triplet in Strongly Coupled Quantum Dot-Nanocavity System
- Below-Gap Spectroscopy of Undoped GaAs/AlGaAs Quantum Wells by Two-Wavelength Excited Photoluminescene
- Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
- Fabrication of InGaAs Strained Quantum Wire Structures Using Selective-Area Metal-Organic Chemical Vapor Deposition Growth
- Two-Photon Control of Biexciton Population in Telecommunication-Band Quantum Dot
- Large Vacuum Rabi Splitting in Single Self-Assembled Quantum Dot-Nanocavity System
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Fabrication of Single-Electron Transistor Composed of a Self-Assembled Quantum Dot and Nanogap Electrode by Atomic Force Microscope Local Oxidation
- Lifetime of Confined LO Phonons in Quantum Dots and Its Impact on Phonon Bottleneck Issue
- Growth Condition Dependence of the Photoluminescence Properties of In_xGa_N/In_yGa_N Multiple Quantum Wells Grown by MOCVD
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Two-Dimensional Island Based Model for Self-Inducing Quantum Dots
- Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue-Violet Laser Diode
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
- High-Frequency Organic Complementary Ring Oscillator Operating up to 200kHz
- Cross Sectional Shape Dependence of Quantum Wire Band Structures and Optical Matrix Elements
- Lasing Oscillation of Vertical Microcavity Quantum Dot Lasers
- Growth and Optical Properties of Self-Assembled Quantum Dots for Semiconductor Lasers with Confined Electrons and Photons (Special Issue on Quantum Effect Divices and Their Fabrication Technologies)
- Localization of Photons in Two-Dimensional Triangular Lattices with Periodic Defects
- Defect Structures of AlN on Sapphire (0001) Grown by Metalorganic Vapor-Phase Epitaxy with Different Preflow Sources
- Tunneling-Injection Single-Photon Emitter Using Charged Exciton State
- Low Noise Figure (6.3 dB) Polarization Insensitive Spot-Size Converter Integrated Semiconductor Optical Amplifier(Special Issue on Recent Progress of Integrated Photonic Devices)
- Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
- Novel Solution Process for High-Mobility C_ Fullerene Field-Effect Transistors
- Metal Organic Chemical Vapor Deposition Growth of High Spectral Quality Site-Controlled InAs Quantum Dots Using In situ Patterning
- Solution-Processed C Single-Crystal Field-Effect Transistors (Special Issue : Applied Physics on Materials Research)
- Silicon-Wire Waveguide Based External Cavity Laser for Milliwatt-Order Output Power and Temperature Control Free Operation with Silicon Ring Modulator
- Solvent Dependence of Vacuum-Dried C60 Thin-Film Transistors
- Enhancement of Light Emission from Silicon by Utilizing Photonic Nanostructures
- Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- Direct Observation of Electron Jet from a Point Contact
- Control of InxGa1-xAs Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
- Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 μm bands
- Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)
- Si Waveguide-Integrated Metal--Semiconductor--Metal and p--i--n-Type Ge Photodiodes Using Si-Capping Layer
- Design of Silicon Photonic Crystal Waveguides for High Gain Raman Amplification Using Two Symmetric Transvers-Electric-Like Slow-Light Modes
- Electro-Mechanical Q Factor Control of Photonic Crystal Nanobeam Cavity
- Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing
- Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots