Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-05-15

著者

• NAKATA Yoshiaki

  Fujitsu Laboratories Ltd.

• Sugawara Mitsuru

  Fujitsu Limited And Fujitsu Laboratories Limited

• Sugawara Mitsuru

  北海道大学 薬学研究臨床薬剤学

• Nakata Y

  Fujitsu Ltd. Atsugi Jpn

• Akiyama Tomoyuki

  Qd Laser Inc.

• HATORI Nobuyuki

  Fujitsu Laboratories Ltd.

• AKIYAMA Tomoyuki

  Femtosecond Technology Research Association

• ISHIKAWA Hiroshi

  Fujitsu Laboratories Ltd.

• Nishikawa Y

  Toshiba Corp. Kawasaki Jpn

• Nishikawa Y

  Materials And Devices Research Laboratories Toshiba Corporation

• Nishikawa Yukie

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Nishikawa Yukie

  Corporate Research & Development Center Toshiba Corporation

• Sugawara Mitsuru

  Fujitsu Laboratories Ltd.

• Sugawara M

  Fujitsu Laboratories Ltd.

• Nakata Y

  Fujitsu Laboratories Ltd.

• Sugawara M

  Semiconductor Company Sony Corporation

• Sugawara M

  Fujitsu Limited And Fujitsu Laboratories Limited

• Nakata Yoshiaki

  Fujitsu Laboratories Limited

• Ishikawa H

  Fukuyama Univ. Hiroshima Jpn

• Ishikawa Hiroshi

  Fujitsu Laboratories Limited

• Sugawara Mitsuru

  Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

関連論文

• Nano-Sized Hollow Bump Array Generated by Single Femtosecond Laser Pulse
• Transfer of Laser Dye by Laser-Induced Forward Transfer : Optics and Quantum Electronics
• Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
• Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
• Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
• Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
• Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
• A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
• InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
• Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
• Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
• Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
• Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
• Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
• Interdiffusion between InAs Quantum Dots and GaAs Matrices
• Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
• New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
• Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
• Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
• Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
• Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
• The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
• Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
• Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
• High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
• High-Power InGaAlP Laser Diodes for High-Density Optical Recording
• Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
• Controlled Quantum Confinement Potentials in Self-Formed InGaAs Quantum Dots Grown by Atomic Layer Epitaxy Technique
• Self-Formed In_Ga_As Quantum Dots on GaAs Substrates Emitting at 1.3 μm
• Functional analysis of phenolsulfonphthalein transport system in Long-Evans Cinnamon rats
• Characterization of Secretory Intestinal Transport of Phenolsulfonphthalein
• Comparison of the Disposition Behavior of Organic anions in an Animal Model for Wilson's Disease (Long-Evans Cinnamon rats) with that in Normal Long-Evans Agouti rats
• Mechanism of Active Secretion of Phenolsulfonphthalein in the Liver via Mrp2 (abcc2), an Organic Anion Transporter
• Single-step isolation method for six glycoforms of human α_1-acid glycoprotein by hydroxylapatite chromatography and study of their binding capacities for disopyramide
• Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)
• Automatically-Controlled C-Band Wavelength Conversion with Constant Output Power Based on Four-Wave Mixing in SOA's(Lasers, Quantum Electronics)
• Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
• Control of In_xGa_As Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
• Purification method for α-1-acid glycoprotein with subsequent high-performance liquid chromatographic determination of monosaccharides in plasma of healthy subjects and patients with renal insufficiency
• Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
• Electrical Properties of Single Crystalline CeO_2 High-k Gate Dielectrics Directly Grown on Si(111)
• Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
• Structure Analysis of δ-phase in Sb-Te Alloys by HRTEM
• Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
• Energy-Band Offset of In_Ga_As-In_(Ga_AI_x)_As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE
• Theory of Exciton Spontaneous Emission in Semiconductor Mesoscopic Quantum Disks Embedded in a Planar Microcavity
• Threshold Current and Its Temperature Dependence in InGaAsP/InP Strained Quantum-Well Lasers under a Magnetic Field
• Model for Lasing Oscillation due to Bi-Excitons and Localized Bi-Excitons in Wide-Gap Semiconductor Quantum Wells
• Slow Carrier Relaxation among Sublevels in Annealed Self-Formed InGaAs/GaAs Quantum Dots
• The Acceptor Level of Fe in In_ Ga_ P
• The Effect of Membrane Surface Potential on the Permeability of Anionic Compounds Across the Apical Membrane in Human Intestinal Epithelial (Caco-2) Cells
• The Transport Mechanism of an Organic Cation, Disopyramide, by Brush-Border Membranes. : Comparison Between Renal Cortex and Small Intestine of the Rat.
• UPTAKE CHARACTERISTICS OF POLYAMINES INTO RAT INTESTINAL BRUSH-BORUER MEMBRANE VESICLES
• MECHANISM OF GASTROINTESTINAL ABSORPTION OF β-LACTAM ANTIBIOTICS : Contribution of Passive Diffusion to the BBM Permeation Process
• Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
• Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
• High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy
• Laser Spectroscopic Diagnostics of Laser-Ablation Processes Used for Thin Film Deposition〔含 コメント〕
• Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
• β-phase Formation Behavior of Homogeneous Fe-Si Alloy Solidified in Short-Duration Microgravity
• Synthesis of Si-Ge Alloy by Rapid Cooling in Short-Duration Microgravity
• Thermal Conductivity Measurement of Molten Silicon by a Hot-Disk Method in Short-Duration Microgravity Environments
• Microstructure of Splat-Solidified CuInSe_2
• Smoothing Roughness of SiC Membrane Surface for X-Ray Masks : X-Ray Lithography
• Smoothing Roughness of SiC Membrane Surface for X-Ray Masks
• Analysis of Light-Induced Degradation in Amorphous Silicon Alloy Solar Cells and Its Application to Accelerated Test Method
• Practical Optical Proximity Effect Correction Adopting Process Latitude Consideration
• New Systematic Evaluation Method for Attenuated Phase-Shifting Mask Specifications
• Evaluation of Phase-Shifting Masks for Dense Contact Holes Using the Exposure-Defocus and Mask Fabrication Latitude Methodology
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• RF Hollow Cathode Discharges with Tapered Shape
• Monte Carlo Simulation of RF Plasmas and Trial Investigation of Similarity Rule
• A Monte Carlo Simulation of Langmuir Probe Methods for Plasmas Having RF Amplitude Oscillations
• Structural Analysis of Ag-In-Sb-Te Phase-Change Material(Optics and Quantum Electronics)
• A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
• In_Ga_AS/InAlGaAs/InGaP Strained Double Quantum Well Lasers on In_Ga_As Ternary Substrate
• A Preliminary Experiment of Volatilization of Minerals in Coal Ash by Chlorination Treatment
• Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
• Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots
• Transmission Electron Microscope Study of Defects in Cd-Diffused n-InP Substrates
• Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
• Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
• Controlling Polarization in Quantum-dot Semiconductor Optical Amplifiers
• Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
• InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
• Lasing-Induced Change in the Differential Resistance of Stripe Geometry Ga_Al_xAs DH Lasers
• Structure of Ultrathin Epitaxial CeO2 Films Grown on Si(111)
• Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers
• Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)

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