Electrical Properties of Single Crystalline CeO_2 High-k Gate Dielectrics Directly Grown on Si(111)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-04-30

著者

• Nakata Y

  Fujitsu Ltd. Atsugi Jpn

• Yasuda N

  Tokyo Inst. Technol. Tokyo

• Ikegawa Sumio

  Corporate Research & Development Center Toshiba Corporation

• Nishikawa Y

  Toshiba Corp. Kawasaki Jpn

• Nishikawa Y

  Materials And Devices Research Laboratories Toshiba Corporation

• Nishikawa Yukie

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Nishikawa Yukie

  Corporate Research & Development Center Toshiba Corporation

• FUKUSHIMA Noburu

  Corporate R&D Center, Toshiba Corporation

• Yasuda Naoki

  Corporate Research & Development Center Toshiba Corporation

• NAKAYAMA Kohei

  Corporate Research & Development Center, Toshiba Corporation

• Nakayama Kohei

  Corporate Research & Development Center Toshiba Corporation

• Fukushima N

  Corporate Research & Development Center Toshiba Corporation

• Ikegawa Sumio

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Nisikawa Yukie

  Corporate Research & Development Center, Toshiba Corporation

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