Ikegawa Sumio | Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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概要
- Ikegawa Sumioの詳細を見る
- 同名の論文著者
- Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japanの論文著者
関連著者
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Ikegawa Sumio
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Ikegawa Sumio
Corporate Research & Development Center Toshiba Corporation
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Shimomura Naoharu
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Shimomura Naoharu
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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Yasuda N
Tokyo Inst. Technol. Tokyo
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Arai M
National Institute For Materials Science
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Arai M
Department Of Applied Physics University Of Tokyo
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Arai Masao
National Institute For Research In Inorganic Materials
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
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FUKUSHIMA Noburu
Corporate R&D Center, Toshiba Corporation
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Yasuda Naoki
Corporate Research & Development Center Toshiba Corporation
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NAKAYAMA Kohei
Corporate Research & Development Center, Toshiba Corporation
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Arai M
Computational Materials Science Center (cmsc) National Institute Of Materials Science (nims)
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Nakayama Kohei
Corporate Research & Development Center Toshiba Corporation
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Tanamoto Tetsufumi
Corporate R&d Center Toshiba Corporation
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Fujita Shinobu
Corporate R&d Center Toshiba Corporation
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Arai M
Univ. Tokyo Tokyo Jpn
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Amano Minoru
Corporate Research And Development Center Toshiba Corporation
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Yoda Hiroaki
Corporate Research & Development Center Toshiba Corporation
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Arai Masao
Computational Materials Science Center National Institute For Materials Science
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Arai Masao
National Institute For Materials Science
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Nitayama Akihiro
Center For Semiconductor Research & Development Toshiba Corporation
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Takahashi Shigeki
Corporate Research And Development Center Toshiba Corporation
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Fukushima N
Corporate Research & Development Center Toshiba Corporation
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Matsumoto Mari
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Amano Minoru
Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8581, Japan
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Yoda Hiroaki
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Yoda Hiroaki
Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama 253-8522, Japan
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Asao Yoshiaki
Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama 253-8522, Japan
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Sugiura Kuniaki
Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama 253-8522, Japan
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Ikegawa Sumio
Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8581, Japan
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Kishi Tatsuya
Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8581, Japan
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Kajiyama Takeshi
Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama 253-8522, Japan
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Iwayama Masayoshi
Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama 253-8522, Japan
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IKEGAWA Sumio
Corporate Research & Development Center, Toshiba Corporation
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Nitayama Akihiro
Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama 253-8522, Japan
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Nisikawa Yukie
Corporate Research & Development Center, Toshiba Corporation
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Shimomura Naoharu
Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8581, Japan
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Takahashi Shigeki
Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8581, Japan
著作論文
- Electrical Properties of Single Crystalline CeO_2 High-k Gate Dielectrics Directly Grown on Si(111)
- Electronic Structures of (Pb_2Cu)Sr_2Eu_xCe_Cu_2O_ (n = 2, 3) : Effect of Fluorite Blocks between Adjacent CuO_2 Layers (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code
- Ion Beam Etching Technology for High-Density Spin Transfer Torque Magnetic Random Access Memory