Ion Beam Etching Technology for High-Density Spin Transfer Torque Magnetic Random Access Memory
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概要
- 論文の詳細を見る
A spin transfer torque magnetoresistive random access memory (STT-MRAM) is the most promising candidate for a non-volatile random access memory, because of its scalability, high-speed operation, and unlimited read/write endurance. An ion beam etching (IBE) is one of the promising etching methods for a magnetic tunnel junction (MTJ) of the STT-MRAM, because it has no after-corrosion and oxidation problems. In this work, we developed the multiple-step wafer-tilted IBE using computer calculation. Using optimized multiple-step IBE conditions, we fabricated MTJs without barrier-short defects.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-08-25
著者
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Amano Minoru
Corporate Research And Development Center Toshiba Corporation
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Nitayama Akihiro
Center For Semiconductor Research & Development Toshiba Corporation
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Takahashi Shigeki
Corporate Research And Development Center Toshiba Corporation
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Shimomura Naoharu
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Amano Minoru
Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8581, Japan
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Yoda Hiroaki
Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama 253-8522, Japan
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Asao Yoshiaki
Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama 253-8522, Japan
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Sugiura Kuniaki
Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama 253-8522, Japan
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Ikegawa Sumio
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Ikegawa Sumio
Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8581, Japan
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Kishi Tatsuya
Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8581, Japan
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Kajiyama Takeshi
Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama 253-8522, Japan
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Iwayama Masayoshi
Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama 253-8522, Japan
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Nitayama Akihiro
Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama 253-8522, Japan
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Shimomura Naoharu
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Shimomura Naoharu
Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8581, Japan
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Takahashi Shigeki
Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8581, Japan
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