Long-Time Annealing and Activation Energy of the Interdiffusion at AlO_x/Co-Fe/Ir-Mn Interfaces
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-05-15
著者
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Tsuchida Kenji
Memory Lsi Research & Development Center Toshiba Corporation Semiconductor Company
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SAITO Yoshiaki
Corporate R&D Center, Toshiba Corporation
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Amano Minoru
Corporate Research And Development Center Toshiba Corporation
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Yoda Hiroaki
Corporate Research And Development Center Toshiba Corporation
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Asao Yoshiaki
Memory Lsi Research & Development Center Toshiba Corporation Semiconductor Company
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Tahara Shuichi
Silicon System Research Lab. Nec Corporation
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Saito Yoshiaki
Corporate Research And Development Center Toshiba Corporation
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NISHIYAMA Katsuya
Corporate Research and Development Center, Toshiba Corporation
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