SAITO Yoshiaki | Corporate R&D Center, Toshiba Corporation

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概要

• 同名の論文著者
• Corporate R&D Center, Toshiba Corporationの論文著者

関連著者

• SAITO Yoshiaki

  Corporate R&D Center, Toshiba Corporation

• Amano Minoru

  Corporate Research And Development Center Toshiba Corporation

• Saito Yoshiaki

  Corporate Research And Development Center Toshiba Corporation

• Saito Yoshiaki

  Corporate R&d Center Toshiba Corporation

• Tsuchida Kenji

  Memory Lsi Research & Development Center Toshiba Corporation Semiconductor Company

• Ishikawa Mizue

  Corporate R&d Center Toshiba Corporation

• INOKUCHI Tomoaki

  Corporate R&D Center, Toshiba Corporation

• MARUKAME Takao

  Corporate R&D Center, Toshiba Corporation

• SUGIYAMA Hideyuki

  Corporate R&D Center, Toshiba Corporation

• Yoda Hiroaki

  Corporate Research And Development Center Toshiba Corporation

• Asao Yoshiaki

  Memory Lsi Research & Development Center Toshiba Corporation Semiconductor Company

• Tahara Shuichi

  Silicon System Research Lab. Nec Corporation

• Marukame Takao

  Corporate R&d Center Toshiba Corporation

• Sagoi Masayuki

  Corporate Research And Development Center Toshiba Corporation

• Inomata Koichiro

  Corporate Research And Development Center Toshiba Corporation

• NISHIYAMA Katsuya

  Corporate Research and Development Center, Toshiba Corporation

• NAKAJIMA Kentaro

  Corporate Research and Development Center, Toshiba Corporation

• TAKAHASHI Shigeki

  Corporate Research and Development Center, Toshiba Corporation

• Nakajima Kentaro

  Corporate Research And Development Center Toshiba Corporation

• Inokuchi Tomoaki

  Corporate R&d Center Toshiba Corporation

• Sugiyama Hideyuki

  Corporate R&d Center Toshiba Corporation

• Takahashi Shigeki

  Corporate Research And Development Center Toshiba Corporation

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著作論文

• Electrical Spin Injection into n-GaAs Channels and Detection through MgO/CoFeB Electrodes
• Long-Time Annealing and Activation Energy of the Interdiffusion at AlO_x/Co-Fe/Ir-Mn Interfaces
• Correlation between Barrier Width, Barrier Height, and DC Bias Voltage Dependences on the Magnetoresistance Ratio in Ir-Mn Exchange Biased Single and Double Tunnel Junctions

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