Electrical Spin Injection into n-GaAs Channels and Detection through MgO/CoFeB Electrodes
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-02-25
著者
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Ishikawa Mizue
Corporate R&d Center Toshiba Corporation
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INOKUCHI Tomoaki
Corporate R&D Center, Toshiba Corporation
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MARUKAME Takao
Corporate R&D Center, Toshiba Corporation
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SUGIYAMA Hideyuki
Corporate R&D Center, Toshiba Corporation
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SAITO Yoshiaki
Corporate R&D Center, Toshiba Corporation
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Marukame Takao
Corporate R&d Center Toshiba Corporation
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Inokuchi Tomoaki
Corporate R&d Center Toshiba Corporation
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Sugiyama Hideyuki
Corporate R&d Center Toshiba Corporation
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Saito Yoshiaki
Corporate R&d Center Toshiba Corporation
関連論文
- Electrical Spin Injection into n-GaAs Channels and Detection through MgO/CoFeB Electrodes
- Long-Time Annealing and Activation Energy of the Interdiffusion at AlO_x/Co-Fe/Ir-Mn Interfaces
- Correlation between Barrier Width, Barrier Height, and DC Bias Voltage Dependences on the Magnetoresistance Ratio in Ir-Mn Exchange Biased Single and Double Tunnel Junctions
- Long-Time Annealing and Activation Energy of the Interdiffusion at AlOx/Co-Fe/Ir-Mn Interfaces