Long-Time Annealing and Activation Energy of the Interdiffusion at AlOx/Co-Fe/Ir-Mn Interfaces
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概要
- 論文の詳細を見る
Dual-spin-valve-type double magnetic tunnel junctions (double MTJs) of sputtered Ir–Mn/CoFe/AlOx/CoFeNi/AlOx/CoFe/Ir–Mn were fabricated using photolithography and ion-beam milling. The double MTJs were subjected to long-time annealing at various temperatures (185–400°C) in order to investigate the thermal stability due to the interdiffusion. Magnetoresistance (MR) ratio and resistance were measured at room temperature before and after annealing. The thermal changes of MR ratio are well-explained by considering three phenomena with effective activation energies of 2.6 eV, 0.26 eV, and 1.9 eV. These values are in good agreement with the activation energies of the interdiffusion based on the vacancy mechanism. The three phenomena with the effective activation energies are well-explained by considering the interdiffusion and redistribution of O and Mn at the AlOx/Co–Fe/Ir–Mn interfaces. Based on the effective activation energies, it is evaluated that there would be no significant changes in the MR ratio in MTJs with CoFe(3 nm)/IrMn pinned layers for a period of more than 10 years at 160°C.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-05-15
著者
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Tsuchida Kenji
Memory Lsi Research & Development Center Toshiba Corporation Semiconductor Company
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Amano Minoru
Corporate Research And Development Center Toshiba Corporation
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Yoda Hiroaki
Corporate Research & Development Center Toshiba Corporation
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Asao Yoshiaki
Memory Lsi Research & Development Center Toshiba Corporation Semiconductor Company
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Tahara Shuichi
Silicon System Research Lab. Nec Corporation
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Nishiyama Katsuya
Corporate Research And Development Center Toshiba Corporation
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Saito Yoshiaki
Corporate R&d Center Toshiba Corporation
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Amano Minoru
Corporate Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Yoda Hiroaki
Corporate Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Yoda Hiroaki
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Asao Yoshiaki
Memory LSI Research & Development Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Tahara Shuichi
Silicon System Research Lab., NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Tsuchida Kenji
Memory LSI Research & Development Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Saito Yoshiaki
Corporate Research and Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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