A Fully Integrated 1 Kb Magnetoresistive Random Access Memory with a Double Magnetic Tunnel Junction
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-07-01
著者
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Ikegawa Sumio
Mram Spintronies R&d Center R&d Association For Future Electron Devices
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Tsuchida Kenji
Memory Lsi Research & Development Center Toshiba Corporation Semiconductor Company
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ASAO Yoshiaki
SoC Research & Development Center, Semiconductor Company, Toshiba Cororation
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SAITO Yoshiaki
MRAM Spintronies R&D Center, R&D Association for Future Electron Devices
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TAKAHASHI Shigeki
MRAM Spintronies R&D Center, R&D Association for Future Electron Devices
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KAI Tadashi
MRAM Spintronies R&D Center, R&D Association for Future Electron Devices
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TSUCHIDA Kenji
SoC Research & Development Center, Semiconductor Company, Toshiba Cororation
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YODA Hiroaki
MRAM Spintronies R&D Center, R&D Association for Future Electron Devices
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Kai Tadashi
Mram Spintronies R&d Center R&d Association For Future Electron Devices
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Yoda Hiroaki
Corporate Research And Development Center Toshiba Corporation
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Asao Yoshiaki
Memory Lsi Research & Development Center Toshiba Corporation Semiconductor Company
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Saito Yoshiaki
Corporate Research And Development Center Toshiba Corporation
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Tsuchida Kenji
Soc Research & Development Center Semiconductor Company Toshiba Cororation
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Yoda Hiroaki
Mram Spintronies R&d Center R&d Association For Future Electron Devices
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Asao Yoshiaki
Soc Research & Development Center Semiconductor Company Toshiba Cororation
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Takahashi Shigeki
Mram Spintronies R&d Center R&d Association For Future Electron Devices
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Saito Yoshiaki
Mram Spintronies R&d Center R&d Association For Future Electron Devices
関連論文
- A Fully Integrated 1 Kb Magnetoresistive Random Access Memory with a Double Magnetic Tunnel Junction
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