High-Performance and Damage-Free Magnetic Film Etching using Pulse-Time-Modulated Cl2 Plasma
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概要
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We have developed a reactive ion etching (RIE) technique for magnetic films using pulse-time-modulated (TM) plasma. Using TM plasma etching can make the etching process high-performance and free of magnetic damage and corrosion. On the other hand, the conventional continuous wave discharge (CW) plasma etching process causes corrosion problems and degrades magnetic properties. We speculate that the negative ions injected from the TM plasma enhanced the chemical reaction on the magnetic film surface. We conclude that the TM plasma etching is a high-performance magnetic film etching process for fabricating magnetoresistive random access memory (MRAM).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-30
著者
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Samukawa Seiji
Institute Of Fluid Science Tohoku University
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Yoda Hiroaki
Corporate Research & Development Center Toshiba Corporation
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Hada Hiromitsu
System Devices Research Laboratories Nec Corporation
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Hada Hiromitsu
System Devices And Fundamental Research Nec Corporation
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Tahara Shuichi
System Devices Research Laboratories Nec Corporation
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Mukai Tomonori
Institute of Fluid Science, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan
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Mukai Tomonori
Institute Of Fluid Science Tohoku University
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Yoda Hiroaki
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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