Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-03-25
著者
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SAMUKAWA Seiji
Institute of Fluid Science, Tohoku University
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Ishikawa Yuki
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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KUBOTA Tomohiro
Institute of Fluid Science, Tohoku University
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Maeda T
Advanced Industrial Sci. And Technol. Ibaraki Jpn
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ENDO Kazuhiko
National Institute of Advanced Industrial Science and Technology
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NODA Shuichi
Institute of Fluid Science, Tohoku University
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OZAKI Takuya
Institute of Fluid Science, Tohoku University
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MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
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LIU Yongxun
National Institute of Advanced Industrial Science and Technology
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ISHII Kenichi
National Institute of Advanced Industrial Science and Technology
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TAKASHIMA Hidenori
National Institute of Advanced Industrial Science and Technology
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SUGIMATA Etsuro
National Institute of Advanced Industrial Science and Technology
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MATSUKAWA Takashi
National Institute of Advanced Industrial Science and Technology
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YAMAUCHI Hiromi
National Institute of Advanced Industrial Science and Technology
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ISHIKAWA Yuki
National Institute of Advanced Industrial Science and Technology
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SUZUKI Eiichi
National Institute of Advanced Industrial Science and Technology
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Samukawa Seiji
Institute Of Fluid Science Tohoku University
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Ozaki Takuya
Institute Of Fluid Science Tohoku University
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Yamauchi Hiromi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ishii K
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Suzuki E
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Suzuki Eiichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Yamauchi Hiroshi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Noda Shuichi
Institute Of Fluid Science Tohoku University
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Liu Yongxun
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Takashima Hidenori
National Institute Of Advanced Industrial Science And Technology (aist)
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Sugimata Etsuro
National Institute Of Advanced Industrial Science And Technology (aist)
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Matsukawa Takashi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kubota Tomohiro
Institute Of Fluid Science Tohoku University
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Ishii Kenichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
関連論文
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- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
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