Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-07-30

著者

• Miyamoto A

  New Ind. Creation Hatchery Center Tohoku Univ.

• Miura Ryuji

  Department of Chemical Engineering, Graduate School of Engineering, Tohoku University

• MIYAMOTO Akira

  Department of Applied Chemistry, Graduate School of Engineering, Tohoku University

• Kubo Momoji

  Department Of Molecular Chemistry And Engineering Tohoku University

• Kubo Momoji

  Department Of Applied Chemistry Graduate School Of Engineering Tohoku University

• Maeda T

  Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Maeda T

  Central Research Laboratory Hitachi Ltd.

• Takami S

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Maeda T

  Electron Devices Division Electrotechnical Laboratory

• IYECHIKA Yasushi

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.

• MAEDA Takayoshi

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.

• TAKAMI Seiichi

  Department of Materials Chemistry, Graduate School of Engineering, Tohoku University

• Miyamoto Akira

  Department Of Applied Chemistry Graduate School Of Engineering Tohoku University

• ONOZU Takayuki

  Department of Materials Chemistry, Graduate School of Engineering, Tohoku University

• Takami Seiichi

  Department Of Chemical System Engineering Faculty Of Engineering The University Of Tokyo

• Miura Ryuji

  Department Of Materials Chemistry Graduate School Of Engineering Tohoku University

• Onozu Takayuki

  Department Of Materials Chemistry Graduate School Of Engineering Tohoku University

• Miura Ryuji

  Department Of Cardiovascular Medicine Okayama University

• Iyechika Yasushi

  Tsukuba Research Laboratory Sumitomochemical Co. Ltd.

• Miura Ryuji

  Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

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