Maeda T | Advanced Industrial Sci. And Technol. Ibaraki Jpn

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
Feasibility of High-Data-Rate Media with Ge-Sb-Te Phase-Change Material
Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition
FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
Vertical Ultrathin-channel Multi-gate MOSFETs (MuGFETs) : Technological Challenges and Future Developments
Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
Device Design Consideration for V_-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
Investigation of Initial Growth Process of GaN Film on Sapphire Using Computational Chemistry
Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
Investigation of Growth Process of GaN Film on Sapphire by Computational Chemistry
Computational Studies on GaN Surface Polarity and InN/GaN Heterostructures by Density Functional Theory and Molecular Dynamics
Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics
Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
Planarization of Film Deposition and Improvement of Channel Structure for Fabrication of Anti-Resonant Reflecting Optical Waveguide Type X-crossing Vertical Coupler Filter
Sidelobe Suppression of Vertical Coupler Filter with an X-Crossing Configuration
Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
High-Density Recording Mechanism of Magnetooptieal Disks
Investigation of low-energy tilted ion implantation for fin-type double-gate metal-oxide-semiconductor field-effect transistor extension doping (Special issue: Solid state devices and materials)
Dual-metal-gate transistors with symmetrical threshold voltages using work-function-tuned Ta/Mo bilayer metal gates (Special issue: Solid state devices and materials)
Ta/Mo stack dual metal gate technology applicable to gate-first processes (Special issue: Solid state devices and materials)

もっと見る

スポンサーリンク