Shirakashi Jun-ichi | Electrotechnical Laboratory

スポンサーリンク

概要

関連著者

もっと見る

著作論文

InGaP/GaAs Heterojunction Bipolar Transistors with an Ultra-High Carbon-Doped Base (p=1.5×10^cm^)
Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium
GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
Room Temperature Nb-Based Single-Electron Transistors
Room Temperature Nb-Based Single-Electron Transistors
Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques
Single-Electron Tunneling through Amorphous Carbon Dots Array

もっと見る

スポンサーリンク