Yamada T | Tokai Univ. Hiratsuka Jpn

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著作論文

Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
Synthesis of Superconducting T'-(La_Ce_x)_2CuO_4
Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
All-Optical Inverter Operating up to 850℃ in an Erbium-Doped Phosphate Glass
Temperature Dependence of Negative Nonlinear Absorption Effect in an Erbium-doped Borate Glass
50 nm Pattern Etching of Si Wafer by Synchrotron Radiation Excited CF_4 Plasma
Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
Sub-100nm Lithography with Using Pulsed Plasma Graft-polymerized Styrene and E-Beam Excited Plasma
Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
Measurement of Surface Fermi Level in Phosphidized GaAs
Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAsP
High-Performance 1.5-μm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)
Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
Selective Area Growth of InP and InGaAs Layers on SiO_2-Masked Substrate by Chemical Beam Epitaxy
In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP
Mechanism of GaAs Selective Growth in Ar^+ Laser-Assited Metalorganic Molecular Beam Epitaxy
Laser-Assisted MOMBE Growth of GaAs Using Tri-Isobutyl Gallium

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