Laser-Assisted MOMBE Growth of GaAs Using Tri-Isobutyl Gallium
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概要
- 論文の詳細を見る
Growth rate enhancement of GaAs films is studied using tri-isobutyl gallium (TIBGa) and trielhylgallium (TEGa) by Ar^+ laser-assisted metalorganic molecular beam epitaxy (MOMBE). TIBGa grows GaAs films at substrate temperatures approximately 50℃ lower than does TEGa. The laser power required to enhance the growth rate for TIBGa is two-thirds that for TEGa. The carbon concentration of a film grown with TIBGa is one-tenth that of one grown with TEGa. Thus, the use of TIBGa has two advantages over TEGa: less laser power required to enhance growth rate, and less carbon in the film.
- 社団法人応用物理学会の論文
- 1989-11-20
著者
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Sophia Univ. Tokyo Jpn
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Yamada T
Tokai Univ. Hiratsuka Jpn
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YAMADA Takeshi
NTT Opto-electronics Laboratories
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IGA Ryuzo
NTT Opto-electronics Laboratories
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SUGIURA Hideo
NTT Opto-electronics Laboratories
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Sugiura H
Ntt Opti‐electronics Lab. Kanagawa‐ken Jpn
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