Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
-
Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
-
Mori Yoshihiro
Ulsi Process Technology Development Center Matsushita Electronics Corporation
-
Yamada T
Daido Inst. Technol. Nagoya Jpn
-
Yamada T
Sophia Univ. Tokyo Jpn
-
SHIBATA Jun
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
-
Yamada T
Ntt Basic Research Laboratories:(present Address) Ntt Opto-electronics Laboratories
-
Yamada T
Tokai Univ. Hiratsuka Jpn
-
YAMANAKA Michinari
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
-
Harada Y
Univ. Tokyo Tokyo Jpn
-
Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corporation
-
Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corp.
-
MORIWAKI Masaru
ULSI Process Technology Development Center, Matsushita Electronics Corporation
-
YAMADA Takayuki
ULSI Process Technology Development Center, Matsushita Electronics Corporation
-
FUJII Shinji
ULSI Process Technology Development Center, Matsushita Electronics Corporation
-
Yamada Tomoyuki
Research Laboratory Oki Electric Industry Co. Ltd.
-
Fujii S
It Components Division Sumitomo Electric Industries Ltd.
-
Yamada T
Department Of Electrical And Electronics Engineering Sophia University
-
Harada Y
Life Culture Department Seitoku University
-
Fujii S
Ion Engineering Research Institute Corp.
-
Yamanaka M
Electron Devices Division Electrotechnical Laboratory
-
Yamanaka Michinari
Ulsi Process Technology Development Center Matsushita Electric Industrial Co. Ltd.
-
Moriwaki Masaru
Ulsi Process Technology Development Center Matsushita Electronics Corporation
-
Fujii Shinji
Ulsi Process Technology Development Center Matsushita Electronics Corporation
-
Shibata Jun
Ulsi Process Technology Development Center Matsushita Electronics Corporation
-
Yamada Takayuki
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
関連論文
- Two-Dimensional Weak Localization in Electron High-T_c Superconductor Nd(2-x) Ce_xCuO_y under High Magnetic Field
- Magnetoresistance Measurements of Single-Crystal LnBa_2Cu_3O_y (Ln=Ho,Dy,Eu and Y) under Pulsed High Magnetic Field
- Study on Surface Acoustic Wave Characteristics of SiO_2/Interdigital-Transducer/ZnO/Diamond Structure and Fabrication of 2.5 GHz Narrow Band Filter
- Evidence of Anisotropic Diffusion of Indium Atoms on a Surface of Perylene-3,4,9,10-tetracarboxilic dianhydride/MoS_2 System Observed by Photoelectron Emission Microscopy (PEEM)
- Magnetic and Superconducting Properties of Ba_2HoCu_3O_ under High Magnetic Field : Electrical Properties of Condensed Matter
- Visible Fluctuation Measurements on the TST-2 Spherical Tokamak
- Two-Chord Interferotnetry Using a Pin Switch for Plasma Density Measurement : Nuclear Sciences, Plasmas, and Electric Discharges
- Growth of CuPc Thin Films on Structured SiO_2/Si(100) Studied by Metastable Electron Emission Microscopy and Photoelectron Emission Microscopy
- Dynamics of Picosecond Laser-Generated Acoustic Waves in Solids : Photoacoustic Spectroscopy
- Surface Transformations in Glass Initiated by Laser-Driven Shock : High Power Ultrasonics
- Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
- Pt/Ba_xSr_TiO_3/Pt Capacitor Technology for 0.15μm Embedded Dynamic Random Access Memory
- Low Temperature BST-CVD Process for the Concave-Type Capacitors Designed for Logic-Base-Embedded DRAMs
- Extendibility of Ta_2O_5 Metal-Insulator-Metal Capacitor Using Ru Electrode
- Ru-Ta_2O_5MIM Capacitor toward 0.1μm DRAM Cell
- Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- Crystal Structure and Superconductivity in Ba_2Y_Pr_xCu_3O_ : Electrical Properties of Condensed Matter
- Superconductivity in Ba_3La_2LuCu_6O_y : Electrical Properties of Condensed Matter
- Preparation and Superconducting Properties of Tetragonal Ba_2YCu_3O_ and Ba_2EuCu_3O_ with Low Oxygen-Defect Concentration (0.05
- Superconductivity in Ba-Ln(lanthanoid)-Cu-O Compounds
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
- Transformation of Dense Contact Holes during SiO_2 Etching
- Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
- InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
- High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
- InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- Surface Images of SiO_2/Si(100) Pattern using Electron Emission Microscopy with Metastable Atoms, Photons and Low-Energy Electrons
- Molecular Orientation and Aggregation of Titanyl Phthalocyanine Molecules on Graphite Substrates: Effects of Surface Topography of the Substrate
- Reaction at the Outermost Surface Selectively Induced by Metastable-Atom Beams
- Surface States of Hydrogen-terminated Si(111)by Metastable Atom Electron Spectroscopy and Angle-resolved Ultraviolet Photoelectron Spectroscopy
- Thickness-Dependent Orientation of the Pendant Phenyl Group at the Surface of Polystyrene Thin Films
- Low-Energy Electron Transmission Spectroscopy of Thin Films of Chloroaluminum Phthalocyanine on MoS_2
- Equivalent Circuit Parameters of Surface-Acoustic-Wave Interdigital Transducers for ZnO/Diamond and SiO_2/ZnO/Diamond Structures
- Low-Loss Diamond Surface Acoustic Wave Devices Using Small-Grain Poly-Crystalline Diamond
- Initial Stage of Oxidation of Si(001)-2 × Surface Studied by X-Ray Photoelectron Spectroscopy
- Initial Stage of Oxidation of Si(001)-2x1 Surface Studied by X-Ray Photoelectron Spectroscopy
- Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
- Heteroepitaxial Growth of CuGaS_2 Layers by Low-Pressure Metalorganic Chemical Vapor Deposition
- 2.51 eV Donor-Acceptor Pair Photoluminescence from Zn-Doped CuAlSe_2 Epilayer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Low-Pressure Metalorganic Chemical Vapor Deposition of CuAlSe_2 Epitaxial Films
- Synthesis of Superconducting T'-(La_Ce_x)_2CuO_4
- Preparation and Superconducting Properties of La_(Ca_Sr_y)_Cu_2O_
- Crystal Structure of Low Oxygen-Defect Tetragonal Ba_2YCu_3O_
- Crystal Structure and Superconducting Properties of BaPb_Bi_xCu_yO_
- Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
- All-Optical Inverter Operating up to 850℃ in an Erbium-Doped Phosphate Glass
- Temperature Dependence of Negative Nonlinear Absorption Effect in an Erbium-doped Borate Glass
- 50 nm Pattern Etching of Si Wafer by Synchrotron Radiation Excited CF_4 Plasma
- Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
- Sub-100nm Lithography with Using Pulsed Plasma Graft-polymerized Styrene and E-Beam Excited Plasma
- Electrical Properties of Al/Al_2O_3/(Ba,Rb)BiO_3/SrTiO_3(Nb) Three Terminal Device
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- In-Situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces
- Low-Pressure Metalorganic Chemical Vapor Deposition of a CuGaSe_2/CuAlSe_2 Heterostructure
- Preparation and Pyroelectric Properties of Mn-Modified (Pb, La)(Zr, Ti)O_3 (PLZT) Ceramics
- He I Photoelectron Spectra of Permethylated Polygermanes
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
- Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors
- Excellent Thermally-Stable Epitaxial Channel for Implanted Planar-Type Hetero-Junction Field-Effect Transistors
- Relationship between Low-Noise Performance and Electron Confinement in the Channel of Two-Mode Channel Field-Effect Transistors in a Low-Drain-Current Condition
- New Plamar Two-Mode Channel Field-Effect Transistor Suitable for L-Band Microwave Monolithic Integrated Circuits with RF Transmission and Reception Blocks Operating at V_≤2 V
- A Superlow-Noise AlGaAs/InGaAs/GaAs Doped Channel Heterojunction Field-Effect Transistor (DC-HFET) with 0.15-μm Gate Length
- A New High Electron Mobility Transistor (HEMT) Structure with a Narrow Quantum Well Formed by Inserting a Few Monolayers in the Channel
- Sample Preparation and Photoluminescence of ZnO Particles Embedded in Thin Alkali Halide Crystals
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAsP
- High-Performance 1.5-μm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)
- Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
- Selective Area Growth of InP and InGaAs Layers on SiO_2-Masked Substrate by Chemical Beam Epitaxy
- In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP
- Mechanism of GaAs Selective Growth in Ar^+ Laser-Assited Metalorganic Molecular Beam Epitaxy
- Ion Irradiation Effect on the Microscopic Potential Distribution of MgO Surface
- Unusual Voltage-Current Characteristic in the Superconducting Transition Region in TaSe_3
- Contact Hole Etch Scaling toward 0.1 μm
- Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
- Highly Selective SiO2 Etching Using Inductively Coupled Plasma Source with a Multispiral Coil
- Single-Line and Diffraction-Limited UV Nitrogen Oscillator-Amplifier Lasers
- Laser-Assisted MOMBE Growth of GaAs Using Tri-Isobutyl Gallium
- Characterization of the Depth Profile of Electrically Activated Ion-Implanted Impurities by X-ray Photoelectron Spectroscopy and Anodic Oxidation
- Microscopic Imaging of Circular Dichroism Using a Polarizing Undulator
- Ion Transport Analysis by Extended Wannier Theory : II.Effect of Ion Density Gradient in the Transverse Direction
- Oxidation of Si(100) Surfaces with Bi and Ag Overlayers
- Pt/BaxSr(1-x)TiO3/Pt Capacitor Technology for 0.15 μm Embedded Dynamic Random Access Memory
- Extendibility of Ta2O5 Metal-Insulator-Metal Capacitor Using Ru Electrode