Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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YAMANAKA Michinari
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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Hayashi S
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Hayashi Shigenori
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Hayashi Shigenori
Faculty Of Engineering Osaka University
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Ogura M
Jst‐crest Ibaraki Jpn
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Kubota M
Opto-electronics Laboratories Oki Electric Industry Co. Ltd.
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Ogura Masahiko
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Yamanaka M
Electron Devices Division Electrotechnical Laboratory
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Yamanaka Michinari
Ulsi Process Technology Development Center Matsushita Electric Industrial Co. Ltd.
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KUBOTA Masafumi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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OGURA Mototsugu
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Kubota Masafumi
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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