Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ^2H Nuclear Magnetic Resonance
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-10-15
著者
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Yamasaki Satoshi
Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research
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Yamasaki S
National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn
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Hayashi Shigenobu
National Institute Of Materials And Chemical Research
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MATSUDA Akihisa
Electrotechnical Laboratory
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Yamasaki S
Joint Res. Center For Atom Technol. (jrcat) Tsukuba Jpn
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Yamasaki S
Nec Corp. Kanagawa Jpn
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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YAMASAKI Shuichi
Superconducting Sensor Laboratory
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Hayashi S
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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YAMASAKI Satoshi
National Institute for Advanced Interdisciplinary Research
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Hayashi Shigenori
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Faculty Of Engineering Osaka University
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Hayashi Shigenobu
National Chemical Laboratory For Industry
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