Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si : H : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-12-20
著者
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Yamasaki Satoshi
Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research
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Yamasaki S
National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn
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TANAKA Kazunobu
Electrotechnical Laboratory
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Yamasaki S
Joint Res. Center For Atom Technol. (jrcat) Tsukuba Jpn
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Yamasaki S
Nec Corp. Kanagawa Jpn
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OKUSHI Hideyo
Electrotechnical Laboratory
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YAMASAKI Satoshi
Electrotechnical Laboratory
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YAMASAKI Shuichi
Superconducting Sensor Laboratory
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KAWAI Hiroshi
Electrotechnical Laboratory
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HOTTA Masahiro
Electrotechnical Laboratory
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