Electrical Characterization of SrTiO3 Thin Films Grown on Nb-Doped SrTiO3 Single Crystals
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概要
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SrTiO3(100) films homoepitaxially grown on Nb-doped SrTiO3(100) substrates with various Nb concentrations and SrTiO3(111) films epitaxialy grown on the [111]-oriented Pt thin-film electrode formed on SiO2/Si substrates with Ta buffer layers were prepared by the helicon sputtering method. After the top Pt electrode formation, the obtained Pt/SrTiO3/SrTiO3:Nb metal-insulator-semiconductor (MIS) capacitors and Pt/SrTiO3/Pt/Ta/SiO2/Si metal-insulator-metal (MIM) capacitors were electrically evaluated by current versus bias voltage characteristic ($I$–$V$) and capacitance versus bias voltage characteristic ($C$–$V$) measurements to clarify the specific features of the SrTiO3/SrTiO3:Nb interface compared with the SrTiO3/Pt interface. The existence of a space charge layer at the SrTiO3/SrTiO3:Nb interface was clearly characterized.
- 2000-01-15
著者
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OKUSHI Hideyo
Electrotechnical Laboratory
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Fujimoto Masayuki
Taiyo Yuden Co. Lid.
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Morito Kentaro
Taiyo Yuden Co. Ltd.
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Sekiguchi Shoichi
Taiyo Yuden Co. Ltd.
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SUZUKI Toshimasa
Taiyo Yuden Co Ltd, R&D Center
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Okushi Hideyo
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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